VISHAY
SFH6943
Vishay Semiconductors
Optocoupler, Phototransistor Output, SOT223/10, Quad
Channel
Features
•
•
•
•
•
•
•
•
•
Transistor Optocoupler in SOT223/10 Package
End Stackable, 1.27 mm Spacing
Low Current Input
Very High CTR, 150 % Typical at I
F
= 1 mA,
V
CE
= 5 V
Good CTR Linearity Versus Forward Current
Minor CTR Degradation
High Collector-Emitter Voltage, V
CEO
=70 V
Low Coupling Capacitance
High Common Mode Transient Immunity
A1
A2
Com. C3
A4
A5
10 E1
9 E2
8 Com. C
7 E3
6 E4
i179077
• Isolation Test Voltage: 1768 V
RMS
Agency Approvals
• UL File #E76222 System Code V
• CSA 93751
Applications
Telecommunication
SMT
PCMCIA
Instrumentation
output. The device consists of four phototransistors
as detectors. Each channel is individually controlled.
The optocoupler is housed in a SOT223/10 package.
All the cathodes of the input LEDs and all the collec-
tors of the output transistors are common enabling a
pin count reduction from 16 pins to 10 pins-a signifi-
cant space savings as compared to four channels that
are electrically isolated individually.
Order Information
Part
SFH6943-2
SFH6943-3
SFH6943-4
Remarks
CTR 63 - 200 %, SMD-10
CTR 100 - 320 %, SMD-10
CTR 160 - 500 %, SMD-10
Description
The SFH6943 is a four channel mini-optocoupler suit-
able for high density packaged PCB application. It
has a minimum of 1768 V
RMS
isolation from input to
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
DC forward current
Surge forward current
Total power dissipation
t
P
≤
10
µs
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
3
5
100
10
Unit
V
mA
mA
mW
Document Number 83688
Rev. 1.3, 20-Apr-04
www.vishay.com
1
SFH6943
Vishay Semiconductors
Output
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Surge collector current
Total power dissipation
t
P
< 1 ms
Test condition
Symbol
V
CE
V
EC
I
C
I
FSM
P
diss
Value
70
7
10
20
20
VISHAY
Unit
V
V
mA
mA
mW
Coupler
Parameter
Isolation test voltage (between
emitter and detector, refer to
climate DIN 40046, part 2,
Nov. 74)
Creepage
Clearance
Comparative tracking index per
DIN IEC 112/VDE0303, part 1
Isolation resistance
V
IO
= 100 V, T
amb
= 25 °C
V
IO
= 100 V, T
amb
= 100 °C
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature, Dip
soldering plus reflow soldering
processes
t = 10 sec. max
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
Test condition
t = 1 sec.
Symbol
V
ISO
Value
1768
Unit
V
RMS
≥
4
≥
4
175
≥
10
11
≥
10
12
- 55 to + 150
- 55 to + 100
100
260
mm
mm
Ω
Ω
°C
°C
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Thermal resistance
V
R
= 3 V
V
R
= 0 V, f = 1 MHz
Test condition
I
F
= 5 mA
Symbol
V
F
I
R
C
O
R
thja
Min
Typ.
1.25
0.01
5
1000
10
Max
Unit
V
µA
pF
K/W
Output
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector-emitter capacitance
Thermal resistance
Collector-emitter leakage
current
V
CE
= 10 V
Test condition
I
CE
= 10
µA
I
EC
= 10
µA
V
CE
= 5 V, f = 1 MHz
Symbol
V
CEO
V
ECO
C
CE
R
thja
I
CEO
Min
70
7
6
500
50
Typ.
Max
Unit
V
V
pF
K/W
nA
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2
Document Number 83688
Rev. 1.3, 20-Apr-04
VISHAY
Coupler
Parameter
Coupling capacitance
Test condition
Symbol
C
C
Min
Typ.
1
SFH6943
Vishay Semiconductors
Max
Unit
pF
Current Transfer Ratio
Parameter
Coupling Transfer Ratio
Test condition
I
F
= 1 mA, V
CE
= 1.5 V
Part
SFH6943-2
SFH6943-3
SFH6943-4
I
F
= 0.5 mA, V
CC
= 5 V
SFH6943-2
SFH6943-3
SFH6943-4
Symbol
I
E
/I
F
I
E
/I
F
I
E
/I
F
I
E
/I
F
I
E
/I
F
I
E
/I
F
Min
63
100
160
32
50
80
100
160
250
Typ.
Max
200
320
500
Unit
%
%
%
%
%
%
Switching Characteristics
Parameter
Turn-on time
Rise time
Turn-off time
Fall time
Test condition
I
E
= 2 mA, R
E
= 100
Ω,
V
CC
= 5 V
I
E
= 2 mA, R
E
= 100
Ω,
V
CC
= 5 V
I
E
= 2 mA, R
E
= 100
Ω,
V
CC
= 5 V
I
E
= 2 mA, R
E
= 100
Ω,
V
CC
= 5 V
Symbol
t
on
t
r
t
off
t
f
Min
Typ.
3
2.6
3.1
2.8
Max
Unit
µs
µs
µs
µs
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
IF
IF→
VCC = 5 V
V0
F = 10 KHz
DF = 50%
IE = 2 mA
↓
isfh6943_01
VO
RE = 100
Ω
isfh6943_02
tR
tON
tF
tOFF
Fig. 1 Switching times (typ.)
Fig. 2 Switching Waveform
Document Number 83688
Rev. 1.3, 20-Apr-04
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3
SFH6943
Vishay Semiconductors
VISHAY
101
103
VF = f (IF)
102
–2
5°
IF = 0,
ICEO = f (VCE)
°
100
IF/mA
50
°
25
°
85
101
ICEO / nA
100
10–1
10–2
10–1
10–2
.8
isfh6943_03
10–3
.9
1
VF/V
1.1
1.2
1.3
1.4
isfh6943_06
0
10
20
30
40
VCE / V
50
60
70
Fig. 3 LED Current vs. LED Voltage
Fig. 6 Collector-Emitter Leakage Current (typ.)
2.0
1.8
1.6
1.4
1.2
NCTR
Normalized to
IF = 1 mA,
NCTR = f (IF)
VCE = 1.5 V
IF = 1 mA
8
7
6
5
IF / mA
IF = f
1.0
.8
.6
.4
.2
0
10
–4
4
3
2
1
0
isfh6943_04
I F /A
10
–3
10
–2
0
isfh6943_07
10
20
30
40 50
TA / °C
60
70
80
90 100
Fig. 4 Non-Saturated Current Transfer
Fig. 7 Permissible Forward Current Diode
25.0
22.5
20.0
17.5
15.0
CCE/PF
30
f = 1 MHz,
CCE = f (VCE)
Ptot = f (TA)
25
20
15
Ptot / mW
Transistor
12.5
10.0
7.5
5.0
2.5
0
10–2
10–1
VCE/V
100
101
102
C CE
10
5
0
0
10
20
30
40
50
Diode
60
70
80
90
100
isfh6943_05
isfh6943_08
TA / °C
Fig. 5 Transistor Capacitances (typ.)
Fig. 8 Permissible Power Dissipation
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4
Document Number 83688
Rev. 1.3, 20-Apr-04
VISHAY
SFH6943
Vishay Semiconductors
103
IF = 1 mA,
VCC = 5 V,
ton, tr, toff, tt = f (RL)
t off
tf
25
ICE = 1 (VCE, IF)
20
10
15
I CE /mA
t / us
t on
101
tr
10
5
100
10
2
isfh6943_09
0
10 3
RL / OHM
10 4
10 5
isfh6943_10
10
-2
-1
10
V CE /V
10
0
1
10
10
2
Fig. 9
Fig. 10 Transistor Output Characteristics
Package Dimensions in Inches (mm)
10°
7°
.016 (.41)
.043
(1.09)
.200 ± .005
(5.80 ± .13)
.018 (.46)
.063 ± .004
(1.60 ± .10)
.256 ± .004
(6.50 ± .10)
0.004 (.10)
0.138 ± .004
max.
(3.51 ± .10)
.01 (.25) R
0.020 ± .004
(.51 ± .10)
10°
0°–7°
.035
(.90)
.002 +.002
–.001
(.05 +.05
–.03)
0.010R
7°
(.25)
45°
.276 ± .008
(7.01 ± .20)
0.020 (.51) min.
R .005(.13)
ISO Method A
.010 (.25)
.053 (1.35)
.050 (1.27)
.040 (1.02)
i178044
.024 (.61)
.026 (.66)
.216 (5.49)
.296 (7.52)
Document Number 83688
Rev. 1.3, 20-Apr-04
www.vishay.com
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