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K7B803625M-HC75T

Description
Standard SRAM, 256KX36, 7.5ns, CMOS, PBGA119
Categorystorage    storage   
File Size575KB,21 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K7B803625M-HC75T Overview

Standard SRAM, 256KX36, 7.5ns, CMOS, PBGA119

K7B803625M-HC75T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionBGA, BGA119,7X17,50
Reach Compliance Codecompliant
Maximum access time7.5 ns
Maximum clock frequency (fCLK)117 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
memory density9437184 bit
Memory IC TypeSTANDARD SRAM
memory width36
Number of terminals119
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum standby current0.14 A
Minimum standby current3.14 V
Maximum slew rate0.35 mA
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
K7B803625M
K7B801825M
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
Revision History
Rev. No.
0.0
0.1
History
Initial draft
Change DC Characteristics.
I
SB
value from 60mA to 90mA at -8
I
SB
value from 50mA to 80mA at -9
I
SB
value from 40mA to 70mA at -10
I
SB1
value from 10mA to 30mA
I
SB2
value from 10mA to 30mA
1. Changed t
CD
from 8.0ns to 8.5ns at -8
2. Changed t
CYC
from 13.0ns to 12.0ns at -10
3. Changed DC condition at Icc and parameters
I
CC
; from 300mA to 350mA at -8,
from 260mA to 300mA at -9,
from 220mA to 260mA at -10,
I
SB
; from 90mA to 130mA at -8,
from 80mA to 120mA at -9,
from 70mA to 110mA at -10,
1. A
DD
119BGA(7x17 Ball Grid Array Package) .
2. A
DD
x32 organization.
Add V
DDQ
Supply voltage( 2.5V )
Changed V
OL
Max value from 0.2V to 0.4V at 2.5V I/O.
1. Final Spec Release.
2. Remove x32 organization.
1. Remove V
DDQ
supply voltage(2.5V)
1. Changed I
CC
from 350mA to 330mA at -8.
2. Add bin -7. (tCD 7.5ns).
1. Add V
DDQ
supply voltage(2.5V)
1. Changed tCYC from 12ns to 10ns at -9.
Draft Date
April. 10 . 1998
Aug. 31. 1998
Remark
Preliminary
Preliminary
0.2
Sep. 09. 1998
Preliminary
0.3
Oct. 15. 1998
Preliminary
0.4
0.5
1.0
Dec. 10. 1998
Dec. 23. 1998
Jan. 29. 1999
Preliminary
Preliminary
Final
2.0
3.0
Feb. 25. 1999
Mar. 30. 1999
Final
Final
4.0
5.0
May. 13. 1999
Nov. 19. 1999
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
November 1999
Rev 5.0
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