24LC08B-I/SM datasheet, PDF - EEWORLD Datasheet

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24LC08B-I/SM: Description1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.207 INCH, PLASTIC, SOIC-8; Categorystorage storage; File Size77KB，12 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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24LC08B-I/SM Overview

1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.207 INCH, PLASTIC, SOIC-8

24LC08B-I/SM Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	SOIC
package instruction	SOP, SOP8,.3
Contacts	8
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	100K ERASE/WRITE CYCLES MIN; CAN BE ORGANIZED AS 4 BLOCKS OF 256 BYTES; DATA RETENTION > 40 YEARS
Maximum clock frequency (fCLK)	0.1 MHz
Data retention time - minimum	200
Durability	1000000 Write/Erase Cycles
I2C control byte	1010XMMR
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
length	5.28 mm
memory density	8192 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	8
word count	1024 words
character code	1000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1KX8
Output characteristics	OPEN-DRAIN
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP8,.3
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3/5 V
Certification status	Not Qualified
Maximum seat height	2.03 mm
Serial bus type	I2C
Maximum standby current	0.00003 A
Maximum slew rate	0.003 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	5.207 mm
Maximum write cycle time (tWC)	10 ms
write protect	HARDWARE
Base Number Matches	1

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24LC04B/08B

4K/8K 2.5V I

™

Serial EEPROMs

FEATURES

• Single supply with operation down to 2.5V

• Low power CMOS technology

- 1 mA active current typical

- 10

A standby current typical at 5.5V

- 5

A standby current typical at 3.0V

• Organized as two or four blocks of 256 bytes

(2 x 256 x 8) and (4 x 256 x 8)

• 2-wire serial interface bus, I

™

compatible

• Schmitt trigger, ﬁltered inputs for noise suppres-

sion

• Output slope control to eliminate ground bounce

• 100 kHz (2.5V) and 400 kHz (5V) compatibility

• Self-timed write cycle (including auto-erase)

• Page-write buffer for up to 16 bytes

• 2 ms typical write cycle time for page-write

• Hardware write protect for entire memory

• Can be operated as a serial ROM

• Factory programming (QTP) available

• ESD protection > 4,000V

• 1,000,000 erase/write cycles guaranteed

• Data retention > 200 years

• 8-pin DIP, 8-lead or 14-lead SOIC packages

• Available for extended temperature ranges

- Commercial (C):

C to +70

- Industrial (I):

-40

C to +85

PACKAGE TYPES

PDIP

24LC04B/08B

SCL

SDA

8-lead

SOIC

24LC04B/08B

SCL

SDA

14-lead

SOIC

SCL

SDA

24LC04B/08B

DESCRIPTION

The Microchip Technology Inc. 24LC04B/08B is a 4K or

8K bit Electrically Erasable PROM. The device is orga-

nized as two or four blocks of 256 x 8-bit memory with

a 2-wire serial interface. Low voltage design permits

operation down to 2.5 volts with typical standby and

active currents of only 5

A and 1 mA respectively. The

24LC04B/08B also has a page-write capability for up to

16 bytes of data. The 24LC04B/08B is available in the

standard 8-pin DIP and both 8-lead and 14-lead surface

mount SOIC packages.

BLOCK DIAGRAM

HV GENERATOR

I/O

CONTROL

LOGIC

MEMORY

CONTROL

LOGIC

XDEC

EEPROM ARRAY

(2 x 256 x 8) or

(4 X 256 X 8)

PAGE LATCHES

SDA

SCL

YDEC

SENSE AMP

R/W CONTROL

is a trademark of Philips Corporation.

1996 Microchip Technology Inc.

DS21051E-page 1

This document was created with FrameMaker 4 0 4

24LC08B-I/SM Related Products

	24LC08B-I/SM	24LC04B-I/SL	24LC04BT-I/SL	24LC04BT-I/SM	24LC08BT-I/SL
Description	1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.207 INCH, PLASTIC, SOIC-8	512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14, 0.150 INCH, PLASTIC, SOIC-14	512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14, 0.150 INCH, PLASTIC, SOIC-14	512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.207 INCH, PLASTIC, SOIC-8	1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14, 0.150 INCH, PLASTIC, SOIC-14
Is it Rohs certified?	incompatible	conform to	conform to	incompatible	incompatible
Parts packaging code	SOIC	SOIC	SOIC	SOIC	SOIC
package instruction	SOP, SOP8,.3	0.150 INCH, PLASTIC, SOIC-14	0.150 INCH, PLASTIC, SOIC-14	SOP, SOP8,.3	SOP, SOP14,.25
Contacts	8	14	14	8	14
Reach Compliance Code	_compli	compli	compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	100K ERASE/WRITE CYCLES MIN; CAN BE ORGANIZED AS 4 BLOCKS OF 256 BYTES; DATA RETENTION > 40 YEARS	100K ERASE/WRITE CYCLES MIN; CAN BE ORGANIZED AS 2 BLOCKS OF 256 BYTES; DATA RETENTION > 40 YEARS	100K ERASE/WRITE CYCLES MIN; CAN BE ORGANIZED AS 2 BLOCKS OF 256 BYTES; DATA RETENTION > 40 YEARS	100K ERASE/WRITE CYCLES MIN; CAN BE ORGANIZED AS 2 BLOCKS OF 256 BYTES; DATA RETENTION > 40 YEARS	100K ERASE/WRITE CYCLES MIN; CAN BE ORGANIZED AS 4 BLOCKS OF 256 BYTES; DATA RETENTION > 40 YEARS
Maximum clock frequency (fCLK)	0.1 MHz	0.1 MHz	0.1 MHz	0.1 MHz	0.1 MHz
Data retention time - minimum	200	200	200	200	200
Durability	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
I2C control byte	1010XMMR	1010XXMR	1010XXMR	1010XXMR	1010XMMR
JESD-30 code	R-PDSO-G8	R-PDSO-G14	R-PDSO-G14	R-PDSO-G8	R-PDSO-G14
JESD-609 code	e0	e3	e3	e0	e0
length	5.28 mm	8.65 mm	8.65 mm	5.28 mm	8.65 mm
memory density	8192 bi	4096 bi	4096 bi	4096 bi	8192 bi
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8	8
Number of functions	1	1	1	1	1
Number of terminals	8	14	14	8	14
word count	1024 words	512 words	512 words	512 words	1024 words
character code	1000	512	512	512	1000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	1KX8	512X8	512X8	512X8	1KX8
Output characteristics	OPEN-DRAIN	OPEN-DRAIN	OPEN-DRAIN	OPEN-DRAIN	OPEN-DRAIN
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOP	SOP	SOP	SOP	SOP
Encapsulate equivalent code	SOP8,.3	SOP14,.25	SOP14,.25	SOP8,.3	SOP14,.25
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Parallel/Serial	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	260	NOT SPECIFIED	NOT SPECIFIED
power supply	3/5 V	3/5 V	3/5 V	3/5 V	3/5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	2.03 mm	1.75 mm	1.75 mm	2.03 mm	1.75 mm
Serial bus type	I2C	I2C	I2C	I2C	I2C
Maximum standby current	0.00003 A	0.00003 A	0.00003 A	0.00003 A	0.00003 A
Maximum slew rate	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	40	40	NOT SPECIFIED	NOT SPECIFIED
width	5.207 mm	3.9 mm	3.9 mm	5.207 mm	3.9 mm
Maximum write cycle time (tWC)	10 ms	10 ms	10 ms	10 ms	10 ms
write protect	HARDWARE	HARDWARE	HARDWARE	HARDWARE	HARDWARE
Base Number Matches	1	1	1	1	1
Is it lead-free?	Contains lead	Lead free	Lead free	-	-

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