RD70HHF1-101 datasheet, PDF - EEWORLD Datasheet

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RD70HHF1-101: DescriptionRF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-2; CategoryDiscrete semiconductor The transistor; File Size262KB，8 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/; Environmental Compliance

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RD70HHF1-101 Overview

RF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-2

RD70HHF1-101 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Mitsubishi
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	20 A
Maximum drain current (ID)	20 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD70HHF1

DRAWING

25.0+/-0.3

7.0+/-0.5 11.0+/-0.3

RoHS Compliance,

DESCRIPTION

Silicon MOSFET Power Transistor 30MHz,70W

OUTLINE

RD70HHF1 is a MOS FET type transistor specifically

designed for HF High power amplifiers applications.

4-C2

24.0+/-0.6

FEATURES

High power and High Gain:

Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz

High Efficiency: 60%typ.on HF Band

10.0+/-0.3

9.6+/-0.3

R1.6+/-0.15

0.1

-0.01

4.5+/-0.7

6.2+/-0.7

+0.05

APPLICATION

For output stage of high power amplifiers in HF

Band mobile radio sets.

5.0+/-0.3

18.5+/-0.3

RD70HHF1-101

is a RoHS compliant products.

RoHS compliance is indicate by the letter “G” after

the Lot Marking.

3.3+/-0.2

RoHS COMPLIANT

1.DRAIN

2.SOURCE

3.GATE

UNIT:mm

ABSOLUTE MAXIMUM RATINGS

(Tc=25

°C

UNLESS OTHERWISE NOTED)

SYMBOL

DSS

GSS

Pch

Tch

Tstg

Rth j-c

PARAMETER

Drain to source voltage

Gate to source voltage

Channel dissipation

Input power

Drain current

Channel Temperature

Storage temperature

Thermal resistance

CONDITIONS

Vgs=0V

Vds=0V

Tc=25

°C

Zg=Zl=50

Ω

junction to case

RATINGS

+/-20

150

175

-40 to +175

1.0

UNIT

°C

°C/W

Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS

(Tc=25deg.C , UNLESS OTHERWISE NOTED)

SYMBOL

DSS

GSS

Pout

ηD

PARAMETER

Drain cutoff current

Gate cutoff current

Gate threshold voltage

Output power

Drain efficiency

Load VSWR tolerance

CONDITIONS

=17V, V

=0V

=10V, V

=0V

=12V, I

=1mA

f=30MHz ,V

=12.5V

Pin=3.5W,Idq=1.0A

=15.2V,Po=70W(Pin Control)

f=30MHz,Idq=1.0A,Zg=50

Ω

Load VSWR=20:1(All Phase)

LIMITS

MIN

TYP MAX.

1.5

4.5

No destroy

UNIT

Note : Above parameters , ratings , limits and conditions are subject to change.

RD70HHF1

17 Aug 2010

1/8

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