2SA1015GR datasheet, PDF - EEWORLD Datasheet

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2SA1015GR: Description150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size342KB，1 Pages; ManufacturerMicro Commercial Components (MCC)

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2SA1015GR Overview

150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

2SA1015GR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compli
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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MCC

Features

•

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SA1015

Capable of 0.4Watts of Power Dissipation.

Collector-current 0.15A

Collector-base Voltage 50V

Operating and storage junction temperature range: -55

O

C to +150

O

C

PNP Silicon

Plastic-Encapsulate

Transistor

TO-92

A

E

Pin Configuration

Bottom View

E

C

B

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage

(I

C

=0.1mAdc, I

B

=0)

Collector-Base Breakdown Voltage

(I

C

=100uAdc, I

E

=0)

Collector Cutoff Current

(V

CB

=50Vdc, I

E

=0)

Emitter Cutoff Current

(V

EB

=5.0Vdc, I

C

=0)

DC Current Gain

(I

C

=2.0mAdc, V

CE

=6.0Vdc)

Collector-Emitter Saturation Voltage

(I

C

=100mAdc, I

B

=10mAdc)

Base-Emitter Saturation Voltage

(I

C

=100mAdc, I

B

=10mAdc)

Base-Emitter Voltage

(I

E

=310mAdc)

Transistor Frequency

(I

C

=1.0mAdc, V

CE

=10Vdc, f=30MHz)

Min

50

---

Max

---

0.1

Units

Vdc

uAdc

C

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

B

ON CHARACTERISTICS

h

FE

V

CE(sat)

V

BE(sat)

V

BE

70

---

400

0.3

1.1

1.45

---

Vdc

D

SMALL-SIGNAL CHARACTERISTICS

f

T

80

---

MHz

G

DIMENSIONS

INCHES

DIM

A

B

C

D

E

G

MIN

.175

.500

.016

.135

.095

MAX

.185

---

.020

.145

.105

MIN

4.45

4.46

12.7

0.41

3.43

2.42

MM

MAX

4.70

---

0.63

3.68

2.67

NOTE

CLASSIFICATION OF H

FE (1)

Rank

Range

O

70-140

Y

120-240

GR

200-400

www.mccsemi.com

Revision: 2

2003/06/30

2SA1015GR Related Products

	2SA1015GR	2SA1015Y	2SA1015O	2SA1015
Description	150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	PLASTIC PACKAGE-3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3
Reach Compliance Code	compli	compli	compli	compliant
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	120	70	70
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz	80 MHz
Base Number Matches	1	1	1	1

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