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MJE700, MJE702, MJE703
(PNP) - MJE800, MJE802,
MJE803 (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
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•
High DC Current Gain
−
h
FE
= 2000 (Typ) @ I
C
= 2.0 Adc
•
Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage
−
Multiplication
•
Choice of Packages
−
MJE700 and MJE800 Series
•
Pb−Free Packages are Available*
4.0 AMPERE
DARLINGTON POWER
TRANSISTORS
COMPLEMENTARY SILICON
40 WATT
50 WATT
NPN
COLLECTOR 2
PNP
COLLECTOR 2
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJE700, MJE800
MJE702, MJE703, MJE802, MJE803
Collector−Base Voltage
MJE700, MJE800
MJE702, MJE703, MJE802, MJE803
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
Value
60
80
60
80
5.0
4.0
0.1
40
0.32
–55 to +150
Unit
Vdc
BASE
3
BASE
3
V
CB
Vdc
EMITTER 1
MJE800
MJE802
MJE803
EMITTER 1
MJE700
MJE702
MJE703
V
EB
I
C
I
B
P
D
T
J
, T
stg
Vdc
Adc
Adc
W
mW/_C
_C
3
2 1
TO−225
CASE 77
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
q
JC
Max
6.25
Unit
_C/W
MARKING DIAGRAM
YWW
JEx0yG
Y
= Year
WW
= Work Week
JEx0y = Device Code
x = 7 or 8
y = 0, 2, or 3
G
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
May, 2011
−
Rev. 11
1
Publication Order Number:
MJE700/D
MJE700, MJE702, MJE703 (PNP)
−
MJE800, MJE802, MJE803 (NPN)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
MJE700, MJE800
(I
C
= 50 mAdc, I
B
= 0)
MJE702, MJE703, MJE802, MJE803
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
(V
CE
= 80 Vdc, I
B
= 0)
MJE700, MJE800
MJE702, MJE703, MJE802, MJE803
V
(BR)CEO
I
CEO
60
80
−
−
−
−
−
−
−
100
100
100
500
2.0
Vdc
mAdc
Symbol
Min
Max
Unit
Collector Cutoff Current
(V
CB
= Rated BV
CEO
, I
E
= 0)
(V
CB
= Rated BV
CEO
, I
E
= 0, T
C
= 100_C)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
(I
C
= 4.0 Adc, V
CE
= 3.0 Vdc)
MJE700, MJE702, MJE800, MJE802
MJE703, MJE803
All devices
I
CBO
mAdc
I
EBO
mAdc
h
FE
750
750
100
−
−
−
−
−
−
−
−
−
2.5
2.8
3.0
2.5
2.5
3.0
−
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= 1.5 Adc, I
B
= 30 mAdc)
MJE700, MJE702, MJE800, MJE802
MJE703, MJE803
(I
C
= 2.0 Adc, I
B
= 40 mAdc)
(I
C
= 4.0 Adc, I
B
= 40 mAdc)
All devices
Base−Emitter On Voltage (Note 1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
(I
C
= 4.0 Adc, V
CE
= 3.0 Vdc)
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
MJE700, MJE702, MJE800, MJE802
MJE703, MJE803
All devices
V
CE(sat)
Vdc
V
BE(on)
Vdc
h
fe
1.0
−
−
50
PD, POWER DISSIPATION (WATTS)
40
TO-220AB
30
TO-126
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
MJE700, MJE702, MJE703 (PNP)
−
MJE800, MJE802, MJE803 (NPN)
4.0
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
TUT
V
2
APPROX
+ 8.0 V
0
V
1
APPROX
-12 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
51
R
B
V
CC
- 30 V
R
C
t
s
2.0
SCOPE
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
t, TIME (
μ
s)
t
f
1.0
0.8
0.6
0.4
PNP
NPN
0.1
0.2
0.4 0.6
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
t
r
D
1
≈
6.0 k
≈
150
+ 4.0 V
25
ms
For t
d
and t
r
, D
1
id disconnected
and V
2
= 0, R
B
and R
C
are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
t
d
@ V
BE(off)
= 0
0.2
0.04 0.06
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
0.3
0.2
0.1
0.05
0.01
SINGLE PULSE
Figure 3. Switching Times
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
D = 0.5
0.2
q
JC
(t) = r(t)
q
JC
q
JC
= 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
0.1
0.07
0.05
0.03
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.02
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
0.01
0.01
Figure 4. Thermal Response (MJE700, 800 Series)
ACTIVE−REGION SAFE−OPERATING AREA
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
5.0 ms
1.0 ms
100
ms
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
5.0 ms
1.0 ms
100
ms
dc
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE702, 703
MJE700
7.0
10
20
30
50
70
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
dc
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE802, 803
MJE800
7.0
10
20
30
50
70
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. MJE700 Series
Figure 6. MJE800 Series
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 are based on T
J(pk)
= 150_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
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3
MJE700, MJE702, MJE703 (PNP)
−
MJE800, MJE802, MJE803 (NPN)
PNP
MJE700 Series
6.0 k
4.0 k
hFE, DC CURRENT GAIN
3.0 k
2.0 k
- 55°C
1.0 k
800
600
400
300
0.04 0.06
T
J
= 125°C
25°C
V
CE
= 3.0 V
4.0 k
hFE, DC CURRENT GAIN
3.0 k
2.0 k
25°C
- 55°C
6.0 k
T
J
= 125°C
V
CE
= 3.0 V
NPN
MJE800 Series
1.0 k
800
600
400
300
0.04 0.06
0.1
0.4 0.6
1.0
0.2
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
0.1
0.4 0.6
1.0
0.2
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 7. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
C
=
0.5 A
1.0 A
2.0 A
4.0 A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.4
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.1
I
C
=
0.5 A
1.0 A
2.0 A
4.0 A
T
J
= 25°C
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
B
, BASE CURRENT (mA)
I
B
, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
2.2
T
J
= 25°C
1.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 250
V, VOLTAGE (VOLTS)
2.2
T
J
= 25°C
1.8
V
BE(sat)
@ I
C
/I
B
= 250
1.4
V
BE
@ V
CE
= 3.0 V
1.4
V
BE
@ V
CE
= 3.0 V
1.0
V
CE(sat)
@ I
C
/I
B
= 250
0.6
1.0
V
CE(sat)
@ I
C
/I
B
= 250
0.6
0.2
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
0.2
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
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