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MUN2213T1

Description
PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
CategoryDiscrete semiconductor    The transistor   
File Size369KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MUN2213T1 Overview

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59

MUN2213T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Transistor component materialsSILICON

MUN2213T1 Related Products

MUN2213T1 MUN2211T1 MUN2216T1 MUN2230T1
Description PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker NXP NXP NXP NXP
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 80 35 160 3
Number of components 1 1 1 1
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.2 W
surface mount YES YES YES YES
Transistor component materials SILICON SILICON SILICON SILICON
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