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LMUN5113T1G

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size222KB,12 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LMUN5113T1G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,

LMUN5113T1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
Number of components1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.31 W
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system cost
and board space. The device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications.
LMUN5111T1G
Series
PNP SILICON
BIAS RESISTOR
TRANSISTORS
3
1
2
CASE 419, STYLE 3
SOT–323 (SC–70)
PIN 3
PIN 1
BASE
(INPUT)
R
1
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
R
2
MARKINGDIAGRAM
We declare that the material of product compliance with RoHS requirements.
6X
M
Ordering Information
Device
LMUN5111T1G Series
LMUN5111T3G Series
Package
SOT323
SOT323
Shipping
3000/Tape&Reel
10000/Tape&Reel
6X
X
M
=Specific Device Code
=(See Marking Table)
=Date Code
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
V
CBO
50
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
R
θJA
R
θJL
T
J
, T
stg
V
CEO
I
C
Symbol
P
D
50
100
Unit
Vdc
Vdc
mAdc
Max
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
–55 to +150
Unit
mW
°C/W
°C/W
°C/W
°C
Rev.O 1/12
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