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P4C1024L-120C6MB

Description
Standard SRAM, 128KX8, 120ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Categorystorage    storage   
File Size923KB,14 Pages
ManufacturerPyramid Semiconductor Corporation
Websitehttp://www.pyramidsemiconductor.com/
Download Datasheet Parametric View All

P4C1024L-120C6MB Overview

Standard SRAM, 128KX8, 120ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32

P4C1024L-120C6MB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDIP
package instructionDIP,
Contacts32
Reach Compliance Codecompli
ECCN code3A001.A.2.C
Maximum access time120 ns
JESD-30 codeR-CDIP-T32
JESD-609 codee0
memory density1048576 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Filter levelMIL-STD-883 Class B
Maximum seat height5.715 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm
Base Number Matches1
P4C1024
HIGH SPEED 128K x 8
DUAL CHIP ENABLE
CMOS STATIC RAM
FEATURES
High Speed (Equal Access and Cycle Times)
— 15/20/25/35 ns (Commercial/Industrial)
— 20/25/35/45/55/70/85/100/120 ns (Military)
Single 5 Volts ±10% Power Supply
Easy Memory Expansion Using
CE
1,
CE
2
and
OE
Inputs
Common Data I/O
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Advanced CMOS Technology
Fast t
OE
Automatic Power Down
Packages
—32-Pin 300 mil DIP and SOJ
—32-Pin 400 mil SOJ
—32-Pin 600 mil Ceramic DIP
—32-Pin 400 mil Ceramic DIP
—32-Pin Solder Seal Flatpack
—32-Pin LCC (450 x 550 mil)
—32-Pin LCC (400 x 820 mil) [Two-Sided]
—32-Pin Ceramic SOJ
DESCRIPTION
The P4C1024 is a 1,048,576-bit high-speed CMOS
static RAM organized as 128Kx8. The CMOS memory
requires no clocks or refreshing, and has equal access
and cycle times. Inputs are fully TTL-compatible. The
RAM operates from a single 5V±10% tolerance power
supply.
Access times of 15 nanoseconds permit greatly en-
hanced system operating speeds. CMOS is utilized to
reduce power consumption to a low level. The P4C1024
is a member of a family of PACE RAM™ products offer-
ing fast access times.
The P4C1024 device provides asynchronous operations
with matching access and cycle times. Memory loca-
tions are specified on address pins A
0
to A
16
. Reading
is accomplished by device selection (CE
1
low and CE
2
high) and output enabling (OE) while write enable (WE)
remains HIGH. By presenting the address under these
conditions, the data in the addressed memory location
is presented on the data input/output pins. The input/
output pins stay in the HIGH Z state when either
CE
1
or
OE
is HIGH or
WE
or CE
2
is LOW.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
DIP (P300, C10, C11),
SOJ (J300, J400, CJ1),
LCC (L1),
SOLDER SEAL
FLATPACK (FS-3) SIMILAR
LCC (L6)
Document #
SRAM124
REV C
Revised December 2011
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