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M1MA141WKT3

Description
0.1A, 2 ELEMENT, SILICON, SIGNAL DIODE, SC-70, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size118KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

M1MA141WKT3 Overview

0.1A, 2 ELEMENT, SILICON, SIGNAL DIODE, SC-70, 3 PIN

M1MA141WKT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeSC-70
package instructionSC-70, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFAST SWITCHING
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Maximum non-repetitive peak forward current500 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
Maximum reverse recovery time0.003 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
M1MA141WKT1G,
M1MA142WKT1G,
SM1MA142WKT1G,
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC−70 package which is designed for low
power surface mount applications.
Features
http://onsemi.com
Fast t
rr
, < 3.0 ns
Low C
D
, < 2.0 pF
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(T
A
= 25C)
Rating
Reverse Voltage
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
Peak Reverse Voltage
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
Forward Current
Single
Dual
Peak Forward Current
Single
Dual
Peak Forward Surge Current
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
Symbol
V
R
Value
40
80
40
80
100
150
225
340
500
750
Unit
Vdc
SC−70 (SOT−323)
CASE 419
STYLE 5
CATHODE
3
1
ANODE 2
MARKING DIAGRAM
V
RM
Vdc
Mx M
G
G
I
F
mAdc
Mx = Device Code
x
= T for 141
U for 142
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
Unit
mW
C
C
M1MA142WKT1G
SM1MA142WKT1G
I
FM
mAdc
I
FSM
(Note 1)
mAdc
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Max
150
150
−55
to
+ 150
ORDERING INFORMATION
Device
M1MA141WKT1G
Package
SC−70
(Pb−Free)
SC−70
(Pb−Free)
SC−70
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 /
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 SEC
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 9
1
Publication Order Number:
M1MA141WKT1/D
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