PNP DARLINGTON
SILICON POWER TRANSISTOR
BDX 66, A, B, C
•
•
•
Hermetic Metal TO3 Package.
Ideal for General Purpose Low Frequency Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCEO
VCBO
VEBO
ICM
IB
PD
TJ
Tstg
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Peak Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
De-rate Linearly Above 25°C
Junction Temperature Range
Storage Temperature Range
BDX66
-60V
-60V
66A 66B 66C
-80V -100V -120V
-80V -100V -120V
-5V
-20A
-0.25A
150W
0.855 W/°C
-55 to +200°C
-55 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
1.17
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8760
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
PNP DARLINGTON
SILICON POWER TRANSISTOR
BDX 66, A, B, C
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
BDX66
V(BR)CEO
(1)
Min.
-60
-80
-100
-120
Typ.
Max.
Units
Collector-Emitter
Breakdown Voltage
IC = -100mA
BDX66A
BDX66B
BDX66C
V
ICEO
Collector Cut-Off Current
VCE =0.5×VCEO(max)
IE = 0
IB =0
-1.0
-1.0
VCB =VCBO(max)
VCB = -40V
VCB = -50V
VCB = -60V
VCB = -70V
BDX66
BDX66A
BDX66B
BDX66C
IC = 0
IB = -40mA
VCE = -3V
2
IC = -1.0A
2000
1000
1000
ICBO
Collector-Base Cut-Off
Current
IE = 0
mA
-5
TJ =200°C
IEBO
VCE(sat)
VBE
VF
(1)
(1)
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
Diode Forward Voltage
Forward-current transfer
ratio
VEB = -5V
IC = -10A
IC = -10A
IF = 10A
-5
-2
-2.5
V
hFE
(1)
VCE = -3V
IC = -10A
IC = -16A
-
DYNAMIC CHARACTERISTICS
h
fe
Magnitude of common
emitter small-signal short-
circuit forward current
transfer ratio
Output Capacitance
Turn-On Time
Turn-Off Time
IC = -5A
f = 1.0MHz
VCB = -10V
f = 1.0MHz
IC = -10A
-IB1 = IB2 = 40mA
VCC = -12V
1.0
3.5
µS
IE = 0
300
pF
VCE = -3V
50
-
Cobo
ton
toff
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8760
Issue 1
Page 2 of 3
PNP DARLINGTON
SILICON POWER TRANSISTOR
BDX 66, A, B, C
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO-3 (TO-204AA)
Pin 1 – Base
Pin 2 – Emitter
Case – Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
22.23
(0.875)
max.
Document Number 8760
Issue 1
Page 3 of 3
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