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BSP108T/R

Description
TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size65KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BSP108T/R Overview

TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Small Signal

BSP108T/R Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeSC-73
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)0.5 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)12 pF
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP108
N-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995

BSP108T/R Related Products

BSP108T/R BSP108 BSP108-T
Description TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Small Signal TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal TRANSISTOR 0.5 A, 80 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Maker NXP NXP NXP
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 80 V 80 V 80 V
Maximum drain current (ID) 0.5 A 0.5 A 0.5 A
Maximum drain-source on-resistance 3 Ω 3 Ω 3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1
Number of terminals 4 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maximum feedback capacitance (Crss) 12 pF 12 pF -
Maximum operating temperature 150 °C 150 °C -
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