BSP108T/R datasheet, PDF - EEWORLD Datasheet

BSP108T/R: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size61KB，12 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BSP108T/R Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	0.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.5 W
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)

DISCRETE SEMICONDUCTORS

DATA SHEET

BSP108

N-channel enhancement mode

vertical D-MOS transistor

Product speciﬁcation

File under Discrete Semiconductors, SC13b

April 1995

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