BIC801M
Bias Controlled Monolithic IC
VHF/UHF RF Amplifier
ADE-208-705C (Z)
4th. Edition
Nov. 1, 1998
Features
•
Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.);
To reduce using parts cost & PC board space.
•
High gain;
PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz)
•
Low noise;
NF = 1.1 dB typ. (at f = 200 MHz), NF = 1.75 dB typ. (at f = 900 MHz)
•
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
•
Provide mini mold packages; MPAK-4R(SOT-143mod)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is “AY–”.
2. BIC801M is individual type number of HITACHI BICMIC.
BIC801M
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
20
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Symbol
V
(BR)DSS
V
(BR)G1SS
V
(BR)G2SS
Min
6
+6
+6
—
—
0.5
7
22
1.6
0.6
—
23
Typ
—
—
—
—
—
0.7
10
27
2.0
1.0
0.024
27
Max
—
—
—
+100
+100
1.0
13
32
2.3
1.4
0.05
—
Unit
V
V
V
nA
nA
V
mA
mS
pF
pF
pF
dB
Test Conditions
I
D
= 200µA
V
G2S
= 0,V
G1
= open
I
G1
= +10µA
V
G2S
= V
DS
= 0
I
G2
= +10µA
V
G1S
= V
DS
= 0
V
G1S
= +5V
V
G2S
= V
DS
= 0
V
G2S
= +5V
V
G1S
= V
DS
= 0
V
DS
= 5V, I
D
= 100µA
V
G1
= open
V
DS
= 5V , V
G2S
= 4V
V
G1
= open
V
DS
= 5V, I
D
= 10mA
V
G2S
=4V, f = 1kHz
V
DS
= 5V, V
G2S
=4V
V
G1
= open
f = 1MHz
V
DS
= 5V, V
G2S
=4V
V
G1
= open
Noise figure
Power gain
NF1
PG2
—
17
1.1
21.5
1.6
—
dB
dB
f = 200MHz
V
DS
= 5V, V
G2S
=4V
V
G1
= open
Noise figure
NF2
—
1.75
2.3
dB
f = 900MHz
Gate1 to source cutoff current I
G1SS
Gate2 to source cutoff current I
G2SS
Gate2 to source cutoff voltage V
G2S(off)
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
I
DS(op)
|y
fs
|
c
iss
c
oss
Reverse transfer capacitance c
rss
Power gain
PG1
2
BIC801M
Main Characteristics
Test Circuit for Operating Items (I
D(op)
, |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2
Gate 2
Gate 1
R
G
V
G1
A
I
D
Drain
Source
200MHz Power Gain, Noise Figure Test Circuit
V
T
1000p
V
G2
1000p
V
T
1000p
47k
Input(50¶)
L1
1000p
36p
1000p
47k
BBFET
L2
1000p
47k
Output(50¶)
10p max
1000p
1SV70
RFC
1SV70
1000p
V
D
Unit@ Resistance@ (¶ )
@@
Capacitance@ (F)
L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
3
BIC801M
900MHz
Power Gain,
Noise Test Circuit
VG2
C4
VD
C5
R1
C3
G2
Input
L1
L2
G1
R2
RFC
D
L3
S
L4
Output
C1
C2
F
C1, C2
C3 F
F
C4, C5
R1 F
R2 F
Variable Capacitori10pF MAX)
Disk Capacitori1000pF)
Air Capacitori1000pF)
47 k¶
4.7 k¶
L1F
10
10
8
L2F
26
i1mm Copper wirej
UnitFmm
3
3
18
10
10
21
L4F
L3F
7
29
7
RFCF1mm Copper wire with enamel 4turns inside d
i
4
BIC801M
Maximum Channel Power
Dissipation Curve
Pch (mW)
200
20
I
D
(mA)
Typical Output Characteristics
V
G1
= open
150
16
Channel Power Dissipation
12
100
Drain Current
V
G2S
= 4 V
3V
2V
1V
8
50
4
0
50
100
150
Ta (°C)
200
0
1
2
3
4
V
DS
(V)
5
Ambient Temperature
Drain to Source Voltage
Drain Current vs. Gate1 Voltage
20
V
G2S
= 4 V
I
D
(mA)
15
3V
25
Power Gain PG (dB)
20
15
10
5
0
1
30
Power Gain vs.
Gate2 to Source Voltage
Drain Current
10
2V
5
1V
0
1.0
Gate1 Voltage V
G1
2.0
(V)
V
DS
= 5 V
V
G1
= open
f = 200 MHz
4
2
3
Gate2 to Source Voltage V
G2S
(V)
5
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