BC51PAS; BC52PAS; BC53PAS
45 V/60 V/80 V, 1 A PNP medium power transistors
Rev. 1 — 19 June 2015
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3
(SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium
power capability and visible and solderable side pads.
Table 1.
BC51PAS
BC52PAS
BC53PAS
[1]
Valid for all available selection groups.
Product overview
Package
DFN2020D-3
SOT1061D
NPN complement
BC54PAS
BC55PAS
BC56PAS
Type number
[1]
1.2 Features and benefits
High collector current capability
Three current gain selections
I
C
and I
CM
Reduced Printed-Circuit Board (PCB)
Leadless very small SMD plastic
area requirements
package with medium power capability
Exposed heat sink for excellent thermal
Suitable for Automatic Optical
and electrical conductivity
Inspection (AOI) of solder joint
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Battery driven devices
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
C unless otherwise specified
Symbol
V
CEO
Parameter
BC51PAS series
BC52PAS series
BC53PAS series
Conditions
Min
-
-
-
Typ
-
-
-
Max Unit
45
60
80
V
V
V
collector-emitter voltage open base
NXP Semiconductors
BC51PAS; BC52PAS; BC53PAS
45 V/60 V/80 V, 1 A PNP medium power transistors
Table 2.
Quick reference data
…continued
T
amb
= 25
C unless otherwise specified
Symbol
I
C
I
CM
h
FE
Parameter
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
[1]
Pulse test: t
p
300 ms;
0.02.
Conditions
single pulse; t
p
1 ms
V
CE
=
2
V; I
C
=
150
mA
V
CE
=
2
V; I
C
=
150
mA
V
CE
=
2
V; I
C
=
150
mA
[1]
[1]
[1]
Min
-
-
63
63
100
Typ
-
-
-
-
-
Max Unit
1
2
250
160
250
A
A
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline
Graphic symbol
3. Ordering information
Table 4.
Ordering information
Package
Name
BC51PAS series
BC52PAS series
BC53PAS series
[1]
Type number
[1]
Description
plastic thermal enhanced ultra thin small
outline package; no leads; 3 terminals;
body 2
2
0.65 mm.
Version
SOT1061D
DFN2020D-3
Valid for all available selection groups.
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
2 of 15
NXP Semiconductors
BC51PAS; BC52PAS; BC53PAS
45 V/60 V/80 V, 1 A PNP medium power transistors
4. Marking
Table 5.
BC51PAS
BC51-10PAS
BC51-16PAS
BC52PAS
BC52-10PAS
BC52-16PAS
BC53PAS
BC53-10PAS
BC53-16PAS
Marking codes
Marking code
C4
C5
C6
C7
C8
C9
CA
CB
CC
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
Parameter
collector-base voltage
BC51PAS series
BC52PAS series
BC53PAS series
V
CEO
collector-emitter voltage
BC51PAS series
BC52PAS series
BC53PAS series
V
EBO
I
C
I
CM
I
B
emitter-base voltage
collector current
peak collector current
base current
single pulse; t
p
1 ms
open collector
open base
-
-
-
-
-
-
-
45
60
80
5
1
2
0.3
V
V
V
V
A
A
A
Conditions
open emitter
-
-
-
45
60
100
V
V
V
Min
Max
Unit
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
3 of 15
NXP Semiconductors
BC51PAS; BC52PAS; BC53PAS
45 V/60 V/80 V, 1 A PNP medium power transistors
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
25
C
[1]
[2]
[3]
[4]
[5]
Min
-
-
-
-
-
-
55
65
Max
0.42
0.81
0.83
1.10
1.65
150
150
150
Unit
W
W
W
W
W
C
C
C
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm
2
.
(1) FR4 PCB, 4-layer copper, 1 cm
2
(2) FR4 PCB, single-sided copper, 6 cm
2
(3) FR4 PCB, single-sided copper, 1 cm
2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 1.
Power derating curves
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
4 of 15
NXP Semiconductors
BC51PAS; BC52PAS; BC53PAS
45 V/60 V/80 V, 1 A PNP medium power transistors
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
in free air
[1]
[2]
[3]
[4]
[5]
Max
298
154
151
114
76
20
Unit
K/W
K/W
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
thermal resistance from junction to solder point
in free air
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm
2
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
5 of 15
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