SIMOPAC
®
Module
BSM 204 A
V
DS
= 50 V
I
D
= 2
×
200 A
R
DS(on)
= 4.5 mΩ
q
q
q
q
q
q
Power module
Half-bridge
N channel
Enhancement mode
Package with insulated metal base plate
1)
Package outline/Circuit diagram: 2a
Type
BSM 204 A
Maximum Ratings
Parameter
Drain-source voltage
Ordering Code
C67076-S1102-A2
Symbol
Values
50
50
±
20
200
600
– 55 … + 150
400
≤
0.31
2500
16
11
F
55/150/56
Unit
V
V
DS
V
DGR
V
GS
I
D
I
D puls
T
j
,
T
stg
P
tot
R
th JC
V
is
–
–
–
–
Drain-gate voltage,
R
GS
= 20 kΩ
Gate-source voltage
Continuous drain current,
T
C
= 55 ˚C
Pulsed drain current,
T
C
= 55 ˚C
Operating and storage temperature range
Power dissipation,
T
C
= 25 ˚C
Thermal resistance
Chip-case
Insulation test voltage
2)
,
t
= 1 min.
Creepage distance, drain-source
Clearance, drain-source
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1)
2)
A
˚C
W
K/W
V
ac
mm
–
See chapter Package Outline and Circuit Diagrams.
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
85
BSM 204 A
Electrical Characteristics
at
T
j
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0,
I
D
= 0.25 mA
Gate threshold voltage
V
GS
=
V
DS
,
I
D
= 1 mA
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0
T
j
= 25 ˚C
T
j
= 125 ˚C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0
Drain-source on-state resistance
V
GS
= 10 V,
I
D
= 130 A
Dynamic Characteristics
Forward transconductance
V
DS
≥
2
×
I
D
×
R
DS(on)max.
,
I
D
= 130 A
Input capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Turn-on time
t
on
(
t
on
=
t
d (on)
+
t
r
)
V
CC
= 40 V,
V
GS
= 10 V
I
D
= 200 A,
R
G
= 3.3
Ω
Turn-off time
t
off
(
t
off
=
t
d (off)
+
t
f
)
V
CC
= 40 V,
V
GS
= 10 V
I
D
= 200 A,
R
G
= 3.3
Ω
Values
typ.
max.
Unit
V
(BR)DSS
50
–
3.0
–
4.0
V
V
GS(th)
2.1
I
DSS
–
–
50
300
10
3.8
250
1000
µA
I
GSS
–
100
nA
mΩ
–
4.5
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
90
–
–
–
–
–
–
–
130
12
6
1.6
280
220
290
60
–
16
8
2.4
–
–
–
–
S
nF
ns
Semiconductor Group
86
BSM 204 A
Electrical Characteristics
(cont’d)
at
T
j
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Reverse diode
Continuous reverse drain current
T
C
= 25 ˚C
Pulsed reverse drain current
T
C
= 25 ˚C
Diode forward on-voltage
I
F
= 400 A ,
V
GS
= 0
Reverse recovery time
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
µs,
V
R
= 30 V
Reverse recovery charge
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
µs,
V
R
= 30 V
Values
typ.
max.
Unit
I
S
–
–
–
1.25
350
4
200
600
A
I
SM
–
V
SD
–
1.6
V
µs
–
–
µC
–
–
t
rr
Q
rr
Semiconductor Group
87
BSM 204 A
Characteristics at
T
j
= 25 ˚C,
unless otherwise specified.
Power dissipation
P
tot
=
f
(
T
C
)
parameter:
T
j
= 150 ˚C
Typ. output characteristics
I
D
=
f
(
V
DS
)
parameter:
t
p
= 80
µs
Safe operating area
I
D
=
f
(
V
DS
)
parameter: single pulse,
T
C
= 25 ˚C
T
j
≤
150 ˚C
Typ. transfer characteristic
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80
µs
,
V
DS
= 25 V
Semiconductor Group
88
BSM 204 A
Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
≥
10 V,
T
j
= 150 ˚C
Drain-source breakdown voltage
V
(BR)DSS
=
b
×
V
(BR)DSS
(25 ˚C)
Drain-source on-state resistance
R
DS(on)
=
f
(
T
j
)
parameter:
I
D
= 130 A;
V
GS
= 10 V
Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
= 0,
f
= 1 MHz
Semiconductor Group
89
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