BSM 204 A
SIMOPAC
®
MODULE
• Half bridge power MOSFET module
• N channel, enhancement mode
• Avalanche rated
• Package with insulated metal base plate
Type
BSM 204 A
V
DS
50 V
I
D
200 A
R
DS(on)
max
0.0045
Ω
Package
HB MOS 1
Ordering Code
C67076-S1102-A20
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R
GS
= 20 kΩ
Gate source voltage
Continuous drain current
T
C
= 55 °C
DC drain current, pulsed
T
C
= 55 °C
Power dissipation
T
C
= 25 °C
Chip temperature
Storage temperature
T
jmax
T
stg
P
tot
400
150
-40 ... + 125
°C
I
Dpuls
600
W
V
GS
I
D
200
Symbol
V
DS
V
DGR
50
± 20
A
Values
50
Unit
V
Thermal resistance chip - case
Thermal resistance case - heat sink
Insulation test voltage,
t
= 1min
Creepage distance, drain-source
Clearance, drain-source
DIN humidity category, DIN 40 040
DIN humidity category, DIN IEC 68-1
R
thJC
R
thCA
V
is
≤
0.31
≤
0.07
2.5
16
11
F
40 / 125 / 56
K/W
kV ac
mm
1
Oct-30-1997
BSM 204 A
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
Drain-Source on-resistance
V
GS
= 10 V,
I
D
= 130 A
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 125 °C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
I
DSS
-
-
50
300
100
1000
nA
R
DS(on)
-
0.0038
0.0045
µA
V
GS(th)
2.1
3
4
Ω
V
Values
typ.
max.
Unit
Reverse Diode
Inverse diode continuous forward current
I
S
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 400 A
Reverse recovery time
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Q
rr
-
3.5
-
t
rr
-
350
-
µC
V
SD
0.65
1.2
1.6
ns
I
SM
-
-
600
V
-
-
200
A
2
Oct-30-1997
BSM 204 A
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
Dynamic Characteristics
Transconductance
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 130 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
= 40 V,
V
GS
= 10 V,
I
D
= 200 A
R
GS
= 3.3
Ω
Rise time
V
DD
= 40 V,
V
GS
= 10 V,
I
D
= 200 A
R
GS
= 3.3
Ω
Turn-off delay time
V
DD
= 40 V,
V
GS
= 10 V,
I
D
= 200 A
R
GS
= 3.3
Ω
Fall time
V
DD
= 40 V,
V
GS
= 10 V,
I
D
= 200 A
R
GS
= 3.3
Ω
-
60
-
t
f
-
220
-
t
d(off)
-
220
-
t
r
-
280
-
t
d(on)
C
rss
-
1.6
2.6
C
oss
-
6
8
C
iss
-
12
16
g
fs
110
130
-
typ.
max.
Unit
S
nF
ns
3
Oct-30-1997
BSM 204 A
Power dissipation
P
tot
=
ƒ(T
C
)
parameter:
T
j
≤
150 °C
450
W
P
tot
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
°C
160
Drain current
I
D
=
ƒ(T
C
)
parameter:
V
GS
≥
10 V ,
T
j
≤
150 °C
220
A
I
D
180
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
°C
160
T
C
T
C
Safe operating area
I
D
=
ƒ(V
DS
)
parameter:
single puls, T
C
= 25°C ,
T
j
≤
150 °C
10
3
=
V
D
S
Transient thermal impedance
Z
th JC
=
ƒ(t
p
)
parameter:
D = t
p
/
T
10
0
/
I
D
t
= 90.0µs
p
100 µs
A
I
D
10
2
)
on
S(
R
D
K/W
10
-1
1 ms
Z
thJC
10
-2
10 ms
D = 0.50
10
-3
10
1
DC
10
-4
single pulse
0.20
0.10
0.05
0.02
0.01
10
0
0
10
10
1
V 10
2
10
-5
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
V
DS
t
p
4
Oct-30-1997
BSM 204 A
Typ. output characteristics
I
D
=
ƒ(V
DS
)
parameter:
t
p
= 80 µs ,
T
j
= 25 °C
450
A
I
D
350
300
250
e
Gate threshold voltage
V
GS (th)
=
ƒ(T
j
)
parameter:
V
GS
=
V
DS
,
I
D
= 1 mA
4.6
P
tot
= 400W
l
k
j i
h
V
GS [V]
a
4.0
b
c
d
e
f
g
h
i
4.5
5.0
5.5
6.0
6.5
7.0
8.0
9.0
10.0
15.0
20.0
V
4.0
V
GS(th)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
98%
g
typ
f
2%
200
150
100
50
0
a
c
b
d
j
k
l
0.4
0.0
V
5.0
-60
-20
20
60
100
°C
160
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
DS
T
j
Typ. transfer characteristic
I
D
=
f
(V
GS
)
parameter:t
p
= 80 µs.
V
DS
= 25 V
200
A
Forward characteristics of reverse diode
I
F
=
ƒ(V
SD
)
parameter:
T
j
, t
p
= 80 µs
10
3
A
I
D
160
140
120
100
80
10
1
60
40
20
0
0
1
2
3
4
5
6
V
V
GS
8
10
0
0.0
0.4
0.8
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
1.2
1.6
2.0
2.4
V
3.0
I
F
10
2
V
SD
5
Oct-30-1997
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