BUK417-500AE datasheet, PDF - EEWORLD Datasheet

BUK417-500AE: DescriptionPower Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size307KB，5 Pages; ManufacturerNorth American Philips Discrete Products Div

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BUK417-500AE Overview

Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Maker	North American Philips Discrete Products Div
package instruction	,
Reach Compliance Code	unknown
Maximum drain current (Abs) (ID)	32 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Number of components	1
Maximum operating temperature	150 °C
Maximum power dissipation(Abs)	310 W

	BUK417-500AE	BUK417-500BE
Description	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
Reach Compliance Code	unknown	unknown
Maximum drain current (Abs) (ID)	32 A	28 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Number of components	1	1
Maximum operating temperature	150 °C	150 °C
Maximum power dissipation(Abs)	310 W	310 W

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