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BUK417-500AE

Description
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size187KB,5 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BUK417-500AE Overview

Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,

BUK417-500AE Parametric

Parameter NameAttribute value
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum drain current (Abs) (ID)32 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)310 W
This Material Copyrighted By Its Respective Manufacturer
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