PXAC243502FV
High Power RF LDMOS Field Effect Transistor
350 W, 28 V, 2300 – 2400 MHz
Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET de-
signed for use in power amplifier applications in the 2300 MHz to
2400 MHz frequency band. Features include an asymmetric design
with high gain and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PXAC243502FV
Package H-37275-4
V
DD
= 28 V, I
DQ
= 850 mA, P
OUT
= 48.3 dBm,
3GPP WCDMA signal, 10 dB PAR
20
18
Single-carrier WCDMA
Broadband Performance
Features
•
Asymmetric design
- Main: 150 W P1dB
- Peak: 200 W P1dB
55
Efficiency
•
Broadband internal matching
•
CW performance at 2350 MHz, 28 V
- Ouput power = 250 W P
1dB
- Efficiency = 46%
- Gain = 16 dB
•
Integrated ESD protection
•
Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
•
Low thermal resistance
•
Pb-free and RoHS-compliant
16
35
Gain
14
12
10
2150
25
15
c243502fv-gr3
2250
2350
2450
2550
5
Frequency (MHz)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon production test fixture in Doherty configuration)
V
DD
= 28 V, V
GS(peak)
= 1.0 V, I
DQ
= 850 mA, P
OUT
= 68 W avg, ƒ = 2400 MHz
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Drain Efficiency (%)
45
Gain (dB)
Symbol
G
ps
Min
14.0
42
—
Typ
15.0
45
–32
Max
—
—
–26
Unit
dB
%
dBc
h
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.2, 2016-06-22
PXAC243502FV
Typical RF Performance
(data taken in production test fixture)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 850 mA, ƒ = 2300 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
24
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 850 mA, ƒ = 2350 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
60
24
Peak/Average Ratio, Gain (dB)
Peak/Average Ratio, Gain (dB)
Efficiency
Efficiency
Gain
60
40
20
16
12
8
4
0
27
32
37
42
47
c243502fv-gr1a
40
20
16
12
8
0
-20
-40
-60
Efficiency (%)
0
-20
PAR @ 0.01% CCDF
PAR @ 0.01% CCDF
4
0
27
32
37
42
47
c243502fv-gr1b
-40
-60
52
52
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 850 mA, ƒ = 2400 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
24
Single-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 850 mA,
ƒ = 2300 to 2400 MHz. 3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
60
-10
2300 ACPL
2400 ACPL
2350 ACPU
2300 EFF
2400 EFF
2350 ACPL
2300 ACPU
2400 ACPU
2350 EFF
Peak/Average Ratio, Gain (dB)
Efficiency
60
50
40
ACP Up, ACP Low (dBc)
20
16
12
8
4
0
27
32
37
42
47
c243502fv-gr1c
40
-20
-30
Efficiency (%)
Gain
20
0
-20
-40
-60
ACP up, ACP low
-40
-50
-60
-70
27
32
37
42
47
30
20
PAR @ 0.01% CCDF
Efficiency
c243502fv-gr2a
10
0
52
52
Average Output Power (dBm)
Average Output Power (dBm)
Data Sheet
3 of 10
Rev. 03.2, 2016-06-22
Drain Efficiency(%)
Efficiency (%)
Gain
20
20
NXP MCU
京公网安备 11010802033920号
EEWORLD
