Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1689298613 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| YTEOL | 0 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 500 V |
| Maximum drain current (ID) | 24 A |
| Maximum drain-source on-resistance | 0.23 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204 |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 300 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
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