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NDS352AP/D87Z

Description
900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size174KB,6 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
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NDS352AP/D87Z Overview

900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

NDS352AP/D87Z Parametric

Parameter NameAttribute value
MakerTexas Instruments
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.9 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power consumption environment0.46 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

NDS352AP/D87Z Related Products

NDS352AP/D87Z NDS352AP/L99Z NDS352AP/S62Z
Description 900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB 900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB 900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V
Maximum drain current (ID) 0.9 A 0.9 A 0.9 A
Maximum drain-source on-resistance 0.3 Ω 0.3 Ω 0.3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power consumption environment 0.46 W 0.46 W 0.46 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is Samacsys - N N
Base Number Matches - 1 1
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