NDB7060L datasheet, PDF - EEWORLD Datasheet

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Datasheet> All Categories > Discrete semiconductor> The transistor> NDB7060L

NDB7060L: Description75A, 60V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB; CategoryDiscrete semiconductor The transistor; File Size160KB，6 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NDB7060L Overview

75A, 60V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

NDB7060L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	550 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	75 A
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.013 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	800 pF
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	150 W
Maximum power dissipation(Abs)	150 W
Maximum pulsed drain current (IDM)	225 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	550 ns
Maximum opening time (tons)	640 ns

NDB7060L Related Products

	NDB7060L	NDP7060L	NDB7060L/L99Z	NDB7060L/S62Z	NDB7060L/L86Z	NDP7060L/J69Z
Description	75A, 60V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	75A, 60V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	75A, 60V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	75A, 60V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	75A, 60V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	75A, 60V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
package instruction	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	550 mJ	550 mJ	550 mJ	550 mJ	550 mJ	550 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V	60 V	60 V
Maximum drain current (ID)	75 A	75 A	75 A	75 A	75 A	75 A
Maximum drain-source on-resistance	0.013 Ω	0.013 Ω	0.013 Ω	0.013 Ω	0.013 Ω	0.013 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	800 pF	800 pF	800 pF	800 pF	800 pF	800 pF
JEDEC-95 code	TO-263AB	TO-220AB	TO-263AB	TO-263AB	TO-263AB	TO-220AB
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3
Number of components	1	1	1	1	1	1
Number of terminals	2	3	2	2	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	150 W	150 W	150 W	150 W	150 W	150 W
Maximum pulsed drain current (IDM)	225 A	225 A	225 A	225 A	225 A	225 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES	YES	YES	NO
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	550 ns	550 ns	550 ns	550 ns	550 ns	550 ns
Maximum opening time (tons)	640 ns	640 ns	640 ns	640 ns	640 ns	640 ns
Maker	Texas Instruments	-	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments
Shell connection	DRAIN	-	DRAIN	DRAIN	DRAIN	-

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