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2MBI300S-120

Description
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M238, 7 PIN
CategoryDiscrete semiconductor    The transistor   
File Size850KB,4 Pages
ManufacturerFuji Electric Co., Ltd.
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2MBI300S-120 Overview

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M238, 7 PIN

2MBI300S-120 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)300 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)530 ns
Nominal on time (ton)600 ns
Base Number Matches1
2MBI300S-120
1200V / 300A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
IGBT Module
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector Continuous
current
1ms
Symbol
V
CES
V
GES
Tc=25°C IC
Tc=80°C
Tc=25°C IC pulse
Tc=80°C
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
is
Mounting *
2
Terminals *
2
Rating
1200
±20
400
300
800
600
300
600
2500
+150
-40 to +125
AC 2500 (1min. )
3.5
4.5
Unit
V
V
A
A
A
A
A
A
W
°C
°C
V
N·m
N·m
Equivalent Circuit Schematic
C2E1
C1
E2
1ms
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage *
1
Screw torque
G1
E1
G2
E2
*
1 :
Aii terminals should be connected together when isolation test will be done
*
2 :
Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6)
Terminals 3.5 to 4.5 N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
2
Characteristics
Min.
Typ.
5.5
7.2
2.3
2.8
36000
7500
6600
0.35
0.25
0.1
0.45
0.08
2.3
2.0
Conditions
Max.
3.0
0.6
8.5
2.6
1.2
0.6
1.0
0.3
3.0
0.35
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=300mA
Tc=25° C V
GE
=15V, I
C
=300A
Tc=125°C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=300A
V
GE
=±15V
R
G
=2.7 ohm
Tj=25°C
Tj=125°C
I
F
=300A
Conditions
Max.
0.05
0.10
IGBT
Diode
the base to cooling fin
°C/W
°C/W
°C/W
I
F
=300A, V
GE
=0V
V
µs
Unit
mA
µA
V
V
pF
µs
Turn-off time
Forward on voltage
Reverse recovery time
Thermal resistance characteristics
Item
Thermal resistance
Characteristics
Min.
Typ.
0.0167
Unit
*
2
: This is the value which is defined mounting on the additional cooling fin with thermal compound
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