MC33260
Product Preview
GreenLine
™
Compact
Power Factor Controller:
Innovative Circuit for
Cost Effective Solutions
http://onsemi.com
MARKING
DIAGRAMS
8
DIP–8
P SUFFIX
CASE 626
1
1
8
8
1
SO–8
D SUFFIX
CASE 751
MC33260D
ALYW
MC33260P
AWL
YYWW
The MC33260 is a controller for Power Factor Correction
preconverters meeting international standard requirements in
electronic ballast and off–line power conversion applications.
Designed to drive a free frequency discontinuous mode, it can also be
synchronized and in any case, it features very effective protections that
ensure a safe and reliable operation.
This circuit is also optimized to offer extremely compact and cost
effective PFC solutions. While it requires a minimum number of
external components, the MC33260 can control the follower boost
operation that is an innovative mode allowing a drastic size reduction
of both the inductor and the power switch. Ultimately, the solution
system cost is significantly lowered.
Also able to function in a traditional way (constant output voltage
regulation level), any intermediary solutions can be easily
implemented. This flexibility makes it ideal to optimally cope with a
wide range of applications.
General Features
8
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Standard Constant Output Voltage or “Follower Boost” Mode
Switch Mode Operation: Voltage Mode
Latching PWM for Cycle–by–Cycle On–Time Control
Constant On–Time Operation That Saves the Use of an Extra Multiplier
Totem Pole Output Gate Drive
Undervoltage Lockout with Hysteresis
Low Start–Up and Operating Current
Improved Regulation Block Dynamic Behavior
Synchronization Capability
Internally Trimmed Reference Current Source
Overvoltage Protection: Output Overvoltage Detection
Undervoltage Protection: Protection Against Open Loop
Effective Zero Current Detection
Accurate and Adjustable Maximum On–Time Limitation
Overcurrent Protection
ESD Protection on Each Pin
TYPICAL APPLICATION
D1...D4
Filtering
Capacitor
L1
VCC
M1
Ro
Sync
DIP–8 CONFIGURATION SHOWN
D1
+ C1
LOAD
(SMPS, Lamp
Ballast,...)
1
A
= Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
PIN CONNECTIONS
Feedback Input
Vcontrol
Oscillator
Capacitor (CT)
Current Sense
Input
1
2
3
4
MC33260P
8 VCC
7 Gate Drive
6 Gnd
5 Synchronization
Input
Safety Features
Oscillator
Capacitor (CT)
Current Sense
Input
Synchronization
Input
Gnd
1
2
3
4
MC33260D
8
Vcontrol
7
Feedback Input
6
VCC
5
Gate Drive
Vcontrol
R OCP
CT
1
2
3
4
8
7
6
5
MC33260
ORDERING INFORMATION
Device
MC33260P
MC33260D
Package
Plastic DIP–8
SO–8
Shipping
50 Units / Rail
98 Units / Rail
R cs
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2000
1
June, 2000 – Rev. 2
Publication Order Number:
MC33260/D
MC33260
BLOCK DIAGRAM
Vo
Current Mirror
IOSC – ch =
CT
11 V
1
0
15 pF
97%Iref
Output_Ctrl
Iref
2 x IO x IO
Iref
Io
Io
Io
Io
Vref
Iref
Current
Mirror
FB
1.5 V
Io
Vreg
300 k
Vcontrol
IovpH/IovpL
REGULATOR
Enable
Vref
+
Iref
r
r
–
+
Ics (205
m
A)
r
–60 mV
1
Current
Sense
LEB
11 V
Output_Ctrl
ThStdwn
0
+
–
11 V/8.5 V
Iuvp
UVP
–
OVP
11 V
+
–
Synchro
11 V
Synchro
Arrangement
VCC
Drive
Gnd
S
R
+
–
PWM Comparator
MC33260
R
R
PWM
Latch
Q
Q
Output_Ctrl
http://onsemi.com
2
MC33260
MAXIMUM RATINGS
Rating
Gate Drive Current*
Source
Sink
VCC Maximum Voltage
Input Voltage
Power Dissipation and Thermal Characteristics
P Suffix, DIP Package
Maximum Power Dissipation @ TA = 85°C
Thermal Resistance Junction to Air
Operating Junction Temperature
Operating Ambient Temperature
*The maximum package power dissipation must be observed.
Pin #
DIP–8
7
Pin #
SO–8
5
IO(Source)
IO(Sink)
8
6
(Vcc)max
Vin
–500
500
16
–0.3 to +10
V
V
Symbol
Value
Unit
mA
PD
R
θJA
TJ
TA
600
100
150
–40 to +105
mW
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS
(VCC = 13 V, TJ = 25°C for typical values, TJ = –40 to 105°C for min/max values
unless otherwise noted.)
Characteristic
Pin #
DIP–8
Pin #
SO–8
Symbol
Min
Typ
Max
Unit
GATE DRIVE SECTION
Gate Drive Resistor
Source Resistor @ IDrive = 100 mA
Sink Resistor @ IDrive = 100 mA
Gate Drive Voltage Rise Time (From 3 V Up to 9 V)
(Note 1)
Output Voltage Falling Time (From 9 V Down to 3 V)
(Note 1)
OSCILLATOR SECTION
Maximum Oscillator Swing
Charge Current @ IFB = 100
µA
Charge Current @ IFB = 200
µA
Ratio Multiplier Gain Over Maximum Swing
@ IFB=100
µA
Ratio Multiplier Gain Over Maximum Swing
@ IFB=200
µA
Average Internal Oscillator Pin Capacitance Over
Oscillator Maximum Swing (CT Voltage Varying
From 0 Up to 1.5 V) (Note 2)
Discharge Time (CT = 1 nF)
REGULATION SECTION
Regulation High Current Reference
Ratio (Regulation Low Current Reference) / Ireg–H
Vcontrol Impedance
Feedback Pin Clamp Voltage @ IFB = 100
µA
Feedback Pin Clamp Voltage @ IFB = 200
µA
1
1
1
1
1
7
7
7
7
7
Ireg–H
Ireg–L / Ireg–H
ZVcontrol
VFB–100
VFB–200
192
0.965
—
1.5
2
200
0.97
300
2.1
2.6
208
0.98
—
2.5
3
µA
—
kΩ
V
V
3
3
3
3
3
3
1
1
1
1
1
1
∆V
T
Icharge
Icharge
Kosc
Kosc
Cint
1.4
87.5
350
5600
5600
10
1.5
100
400
6400
6400
15
1.6
112.5
450
7200
7200
20
V
µA
µA
1/(V.A)
1/(V.A)
pF
7
5
ROL
ROH
7
7
5
5
tr
tf
10
5
—
—
20
10
50
50
35
25
—
—
ns
ns
Ω
3
1
Tdisch
—
0.5
1
µs
NOTE: IFB is the current that is drawn by the Feedback Input pin.
http://onsemi.com
3
MC33260
ELECTRICAL CHARACTERISTICS
(VCC = 13 V, TJ = 25°C for typical values, TJ = –40 to 105°C for min/max values
unless otherwise noted.)
Characteristic
CURRENT SENSE SECTION
Zero Current Detection Comparator Threshold
Negative Clamp Level (ICS–pin = –1 mA)
Bias Current @ Vcs = VZCD–th
Propagation Delay (Vcs > VZCD–th) to Gate Drive High
Current Sense Pin Internal Current Source
Leading Edge Blanking Duration
OverCurrent Protection Propagation Delay
(Vcs < VZCD–th to Gate Drive Low)
SYNCHRONIZATION SECTION
Synchronization Threshold
DIP–8
SO–8
Negative Clamp Level (Isync = –1 mA)
Minimum Off–Time
Minimum Required Synchronization Pulse Duration
OVERVOLTAGE PROTECTION SECTION
OverVoltage Protection High Current Threshold
and Ireg–H Difference
OverVoltage Protection Low Current Threshold
and Ireg–H Difference
Ratio (IOVP–H/IOVP–L
)
Propagation Delay (IFB > 110% Iref to Gate Drive Low)
UNDERVOLTAGE PROTECTION SECTION
Ratio (UnderVoltage Protection Current
Threshold) / Ireg–H
Propagation Delay (IFB < 12% Iref to Gate Drive Low)
THERMAL SHUTDOWN SECTION
Thermal Shutdown Threshold
Hysteresis
VCC UNDERVOLTAGE LOCKOUT SECTION
Start–Up Threshold
Disable Voltage After Threshold Turn–On
TOTAL DEVICE
Power Supply Current
Start–Up (VCC
=
5 V with VCC Increasing)
Operating @ IFB = 200
µA
8
6
ICC
—
—
0.1
4
0.25
8
mA
8
8
6
6
Vstup–th
Vdisable
9.7
7.4
11
8.5
12.3
9.6
V
V
7
7
5
5
Tstdwn
∆T
stdwn
—
—
150
30
—
—
°C
°C
1
7
7
5
IUVP/Ireg–H
TUVP
12
—
14
500
16
—
%
ns
1
1
1
7
7
7
7
5
IOVP–H–Ireg–H
IOVP–L–Ireg–H
IOVP–H / IOVP–L
TOVP
8
0
1.02
—
13
—
—
500
18
—
—
—
µA
—
—
ns
5
–
5
7
5
–
3
3
5
3
Vsync–th
Vsync–th
Cl–neg
Toff
Tsync
0.8
0.8
—
1.5
—
1
1
–0.7
2.1
—
1.2
1.4
—
2.7
0.5
V
V
V
µs
µs
7
5
4
4
4
7
4
2
2
2
5
2
VZCD–th
Cl–neg
Ib–cs
TZCD
IOCP
τ
LEB
TOCP
–90
—
–0.2
—
192
—
100
–60
–0.7
—
500
205
400
160
–30
—
—
—
218
—
240
mV
V
µA
ns
µA
ns
ns
Pin #
DIP–8
Pin #
SO–8
Symbol
Min
Typ
Max
Unit
NOTES:
(1) 1 nF being connected between the pin 7 and ground for DIP–8, between Pin 5 and ground for SO–8.
(2) Guaranteed by design.
(3) No load is connected to the gate drive which is kept high during the test.
Vcs is the Current Sense Pin Voltage and IFB is the Feedback Pin Current
http://onsemi.com
4
MC33260
Pin Numbers are Relevant to the DIP–8 Version
Vcontrol : REGULATION BLOCK OUTPUT (V)
Vcontrol : REGULATION BLOCK OUTPUT (V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160 180 200 220 240
Ipin1: FEEDBACK CURRENT (µA)
– 40°C
25°C
105°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
185
190
195
200
205
210
Ipin1: FEEDBACK CURRENT (µA)
– 40°C
25°C
105°C
Figure 1. Regulation Block Output versus
Feedback Current
Figure 2. Regulation Block Output versus
Feedback Current
1.340
MAXIMUM OSCILLATOR SWING (V)
FEEDBACK INPUT VOLTAGE (V)
1.335
1.330
1.325
1.320
1.315
1.310
1.305
1.300
–40
–20
0
20
40
60
80
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80 100 120 140 160 180 200 220 240
JUNCTION TEMPERATURE (°C)
Ipin1: FEEDBACK CURRENT (µA)
– 40°C
25°C
105°C
Figure 3. Maximum Oscillator Swing versus
Temperature
Figure 4. Feedback Input Voltage versus
Feedback Current
I osc–ch , OSCILLATOR CHARGE CURRENT (
m
A)
500
450
400
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160 180 200 220 240
Ipin1: FEEDBACK CURRENT (µA)
– 40°C
25°C
105°C
I osc–ch , OSCILLATOR CHARGE CURRENT (
m
A)
410
Ipin1 = 200
m
A
405
400
395
390
385
–40
–20
0
20
40
60
80
100
JUNCTION TEMPERATURE (°C)
Figure 5. Oscillator Charge Current versus
Feedback Current
Figure 6. Oscillator Charge Current versus
Temperature
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
