RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236,
| Parameter Name | Attribute value |
| Maker | TEMIC |
| Reach Compliance Code | unknown |
| Other features | LOW NOISE |
| Configuration | SINGLE |
| FET technology | JUNCTION |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JEDEC-95 code | TO-236 |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | DEPLETION MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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