Preliminary
Datasheet
BCR8PM-12LD
Triac
Medium Power Use
Features
I
T (RMS)
: 8 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT III
: 50 mA
Viso : 2000 V
R07DS0140EJ0200
(Previous: REJ03G1564-0100)
Rev.2.00
Sep 17, 2010
The product guaranteed maximum junction
temperature 150C.
Insulated Type
Planar Type
UL Recognized: Yellow Card No. E223904
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Motor control, heater control
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Symbol
V
DRM
V
DSM
Ratings
8
48
9.5
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Voltage class
12
600
700
Unit
V
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 85C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T
1
·T
2
·G terminal to case
R07DS0140EJ0200 Rev.2.00
Sep 17, 2010
Page 1 of 7
BCR8PM-12LD
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
1.5
1.5
1.5
50
50
50
—
4.9
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 125C, V
DRM
applied
Tc = 25C, I
TM
= 12 A,
Instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0140EJ0200 Rev.2.00
Sep 17, 2010
Page 2 of 7
BCR8PM-12LD
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
5
Rated Surge On-State Current
60
On-State Current (A)
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
-1
Surge On-State Current (A)
1.8
2.2
2.6
3.0
3.4
3.8
Tj = 25°C
50
40
30
20
10
0
10
0
0.6
1.0
1.4
2
3
5 7 10
1
2
3
5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60 Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
-1
10
1
V
GD
= 0.2 V
V
GT
= 1.5 V
P
G(AV)
= 0.5 W
V
GM
= 10 V
P
GM
=5 W
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
Typical Example
I
RGTIII
Gate Voltage (V)
I
GM
= 2 A
I
FGTI
I
FGT I
I
RGT II
I
RGT III
I
RGTI
2 3
5 710
2
2 3
5 7 10
3
2 3
5 7 10
4
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
–1
10
3
10
4
Typical Example
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60 Hz)
R07DS0140EJ0200 Rev.2.00
Sep 17, 2010
Page 3 of 7
BCR8PM-12LD
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Preliminary
Maximum On-State Power Dissipation
16
Transient Thermal Impedance (°C/W)
No Fins
On-State Power Dissipation (W)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
14
12
360° Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10
10
-1
10
1
2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
2 3 5 710
5
Conduction Time (Cycles at 60 Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
140
Allowable Ambient Temperature vs.
RMS On-State Current
160
120
100
80
60
40
Ambient Temperature (°C)
Curves apply regardless
of conduction angle
140
120
All fins are black painted
aluminum and greased
120
×
120
×
t2.3
Case Temperature (°C)
100
80
60
40
20
0
100
×
100
×
t2.3
60
×
60
×
t2.3
360° Conduction
20
Resistive,
inductive loads
0
0
2
4
6
8
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
0
2
4
6
8
10
12
14
16
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
7
5
3
2
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
-60 -40 -20
Typical Example
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20 40 60 80 100 120 140 160
RMS On-State Current (A)
Junction Temperature (°C)
R07DS0140EJ0200 Rev.2.00
Sep 17, 2010
Page 4 of 7
BCR8PM-12LD
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
Preliminary
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
Typical Example
Distribution
Latching Current (mA)
T
2
+, G–
Typical Example
T
2
+, G+
Typical Example
T
2
–, G–
0
20 40 60 80 100 120 140 160
10
0
-60 -40 -20
Junction Temperature (°C)
Junction Temperature (°C)
160
Breakover Voltage (dv/dt = x V/ms)
×
100 (%)
Breakover Voltage (dv/dt = 1 V/ms)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Typical Example
140
120
100
80
60
40
20
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
140
120
III Quadrant
Typical Example
Tj = 125°C
100
80
60
40
20
0
10
1
2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
I Quadrant
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = x V/ms)
×
100 (%)
Breakover Voltage (dv/dt = 1 V/ms)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
160
140
120
100
80
60
40
20
0
10
1
2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
Commutation Characteristics (Tj = 125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
7
5
3
2
10
1
7
5
3
2
10
0
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 150°C
III Quadrant
Minimum
Characteristics Value
Typical Example
Tj = 125°C
I
T
= 4 A
τ
= 500
μs
V
D
= 200 V
f = 3 Hz
I Quadrant
I Quadrant
III Quadrant
7
10
0
2
3
5 7
10
1
2
3
5 7
10
2
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0140EJ0200 Rev.2.00
Sep 17, 2010
Page 5 of 7
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