28C64AF-15/VS datasheet, PDF - EEWORLD Datasheet

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28C64AF-15/VS: Description8K X 8 EEPROM 5V, 150 ns, PDSO28, 8 X 13.40 MM, PLASTIC, VSOP-28; Categorystorage storage; File Size67KB，8 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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28C64AF-15/VS Overview

8K X 8 EEPROM 5V, 150 ns, PDSO28, 8 X 13.40 MM, PLASTIC, VSOP-28

28C64AF-15/VS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	SOIC
package instruction	8 X 13.40 MM, PLASTIC, VSOP-28
Contacts	28
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum access time	150 ns
Other features	AUTOMATIC WRITE
command user interface	NO
Data polling	YES
JESD-30 code	R-PDSO-G28
JESD-609 code	e0
length	11.8 mm
memory density	65536 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP28,.53,22
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.55 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
width	8 mm
Maximum write cycle time (tWC)	1 ms
Base Number Matches	1

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28C64A

64K (8K x 8) CMOS EEPROM

FEATURES

• Fast Read Access Time—150 ns

• CMOS Technology for Low Power Dissipation

- 30 mA Active

- 100

A Standby

• Fast Byte Write Time—200

s or 1 ms

• Data Retention >200 years

• High Endurance - Minimum 100,000 Erase/Write

Cycles

• Automatic Write Operation

- Internal Control Timer

- Auto-Clear Before Write Operation

- On-Chip Address and Data Latches

• Data Polling

• Ready/Busy

• Chip Clear Operation

• Enhanced Data Protection

- V

Detector

- Pulse Filter

- Write Inhibit

• Electronic Signature for Device Identiﬁcation

• 5-Volt-Only Operation

• Organized 8Kx8 JEDEC Standard Pinout

- 28-pin Dual-In-Line Package

- 32-pin PLCC Package

- 28-pin Thin Small Outline Package (TSOP)

8x20mm

- 28-pin Very Small Outline Package (VSOP)

8x13.4mm

• Available for Extended Temperature Ranges:

- Commercial: 0˚C to +70˚C

PACKAGE TYPES

RDY/BSY

A12

I/O0

I/O1

I/O2

•1

Vcc

A11 A4

A10 A2

I/O7

I/O6

I/O0

I/O5

I/O4

I/O3

RDY/BSY

A12

Vcc

A11

A10

I/O7

I/O6

• Pin 1 indicator on PLCC on top of package

A11

Vcc

RDY/BSY

A12

A11

RDY/BSY

A12

I/O1

I/O2

Vss

I/O3

I/O4

I/O5

DIP/SOIC

PLCC

A10

I/07

I/06

I/05

I/04

I/03

Vss

I/02

I/01

I/00

A10

I/O7

I/O6

I/O5

I/O4

I/O3

I/O2

I/O1

I/O0

TSOP

VSOP

DESCRIPTION

The Microchip Technology Inc. 28C64A is a CMOS 64K non-

volatile electrically Erasable PROM. The 28C64A is

accessed like a static RAM for the read or write cycles without

the need of external components. During a “byte write”, the

address and data are latched internally, freeing the micropro-

cessor address and data bus for other operations. Following

the initiation of write cycle, the device will go to a busy state

and automatically clear and write the latched data using an

internal control timer. To determine when the write cycle is

complete, the user has a choice of monitoring the Ready/

Busy output or using Data polling. The Ready/Busy pin is an

open drain output, which allows easy conﬁguration in wired-

or systems. Alternatively, Data polling allows the user to read

the location last written to when the write operation is com-

plete. CMOS design and processing enables this part to be

used in systems where reduced power consumption and reli-

ability are required. A complete family of packages is offered

to provide the utmost ﬂexibility in applications

BLOCK DIAGRAM

I/O0

I/O7

Rdy/

Busy

Data Protection

Circuitry

Chip Enable/

Output Enable

Control Logic

Auto Erase/Write

Timing

Data

Poll

Input/Output

Buffers

Program Voltage

Generation

A12

Decoder

Y Gating

Decoder

16K bit

Cell Matrix

1996 Microchip Technology Inc.

DS11109H-page 1

This document was created with FrameMaker 4 0 4

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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