Values beyond absolute maximum ratings can cause the device to be pre-
maturely damaged. Absolute maximum ratings are stress ratings only and
functional device operation is not implied.
+6V
Supply Voltage between V
S
and GND
Maximum Continuous Output Current
50mA
Power Dissipation
Pin Voltages
Storage Temperature
Operating Temperature
Lead Temperature
See Curves
GND - 0.5V to V
S
+0.5V
-65°C to +150°C
-40°C to +85°C
260°C
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified
temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
.
Electrical Characteristics
V
S
=+5V, GND=0V, T
A
=25°C, CE = +2V, unless otherwise specified.
Parameter
AC Performance
dG
dP
BW
BW1
GBWP
SR
ts
A
VOL
V
OS
T
C
V
OS
I
B
CMIR
CMRR
R
IN
C
IN
V
OP
Differential Gain Error
Differential Phase Error
Bandwidth
Bandwidth
Gain Bandwidth Product
Slew Rate
Settling Time
Open Loop Voltage Gain
G=1, R
L
=150Ω to GND, R
F
=0, V
O
=0.5V to
3.5V
to 0.1%, V
OUT
= 0 to 3V
R
L
=no load, V
OUT
=0.5V to 3V
R
L
=150Ω to GND, V
OUT
=0.5V to 3V
Offset Voltage
Input Offset Voltage Temperature Coefficient
Input Bias Current
Common Mode Input Range
Common Mode Rejection Ratio
Input Resistance
Input Capacitance
Positive Output Voltage Swing
R
L
=150Ω to 2.5V
[2]
R
L
=150Ω to GND
V
ON
Negative Output Voltage Swing
R
L
=150Ω to 2.5V
R
L
=150Ω to GND
R
L
=1K to 2.5V
+I
OUT
Positive Output Current
[2]
[2]
[1]
[1]
Description
Conditions
Min
Typ
Max
Units
G=2, R
L
=150Ω to 2.5V, R
F
=1KΩ
G=2, R
L
=150Ω to 2.5V, R
F
=1KΩ
-3dB, G=1, R
L
=10kΩ, R
F
=0
-3dB, G=1, R
L
=150Ω, R
F
=0
±0.1dB, G=1, R
L
=150Ω to GND, R
F
=0
150
0.1
0.1
100
60
8
60
200
35
54
40
65
50
25
15
10
%
deg
MHz
MHz
MHz
MHz
V/µs
ns
dB
dB
mV
mV
µV/
O
C
100
3.5
nA
V
dB
dB
GΩ
pF
V
V
V
0.30
0.05
120
V
V
V
mA
DC Performance
V
CM
=1V, SOT23-5 and MSOP packages
V
CM
=1V, All other packages
V
CM
=0V & 3.5V
CMRR
≥
47dB
DC, V
CM
= 0 to 3.0V
DC, V
CM
= 0 to 3.5V
0
50
47
60
60
1.5
1.5
4.70
4.20
4.95
4.85
4.65
4.97
0.15
0
0.03
60
90
2
Input Characteristics
Output Characteristics
R
L
=1KΩ to 2.5V
[2]
[2]
[2]
R
L
=10Ω to 2.5V
2
EL5144C, EL5146C, EL5244C, EL5246C, EL5444C
EL5144C, EL5146C, EL5244C, EL5246C,
EL5444C
100 MHz Single Supply Rail to Rail Amplifier
Electrical Characteristics
V
S
=+5V, GND=0V, T
A
=25°C, CE = +2V, unless otherwise specified.
Parameter
-I
OUT
t
EN
t
DIS
I
IHCE
I
ILCE
V
IHCE
V
ILCE
Supply
Is
ON
Is
OFF
PSOR
PSRR
Supply Current - Enabled (per amplifier)
Supply Current - Disabled (per amplifier)
Power Supply Operating Range
Power Supply Rejection Ratio
DC, V
S
= 4.75V to 5.25V
No Load, V
IN
= 0V, CE=5V
No Load, V
IN
= 0V, CE=0V
4.75
50
7
2.6
5.0
60
8.8
5
5.25
mA
µA
V
dB
Description
Negative Output Current
R
L
=10Ω to 2.5V
EL5146C, EL5246C
EL5146C, EL5246C
CE = 5V, EL5146C, EL5246C
CE = 0V, EL5146C, EL5246C
EL5146C, EL5246C
EL5146C, EL5246C
2.0
0.8
Conditions
Min
-50
Typ
-65
Max
-80
Units
mA
Enable (EL5146C & EL5246C Only)
Enable Time
Disable Time
CE pin Input High Current
CE pin Input Low Current
CE pin Input High Voltage for Power Up
CE pin Input Low Voltage for Power Down
500
10
0.003
-1.2
1
-3
nS
nS
µA
µA
V
V
1. Standard NTSC test, AC signal amplitude = 286 mV
p-p
, f=3.58 MHz, VOUT is swept from 0.8V to 3.4V, RL is DC coupled
2. R
L
is Total Load Resistance due to Feedback Resistor and Load Resistor
3
EL5144C, EL5146C, EL5244C, EL5246C, EL5444C
EL5144C, EL5146C, EL5244C, EL5246C,
EL5444C
100 MHz Single Supply Rail to Rail Amplifier
Typical Performance Curves
19
+2
MAGNITUDE (NORMALIZED) (dB)
A
V
= +1, R
F
= 0Ω
0
-45
PHASE (°)
-2
A
V
= +2, R
F
= 1KΩ
0
A
V
= +1, R
F
= 0Ω
Non-Inverting Frequency Response (Gain)
V
CM
= 1.5V, R
L
= 150Ω
15
Non-Inverting Frequency Response (Phase)
V
CM
= 1.5V, R
L
= 150Ω
-90
-4
A
V
= +2, R
F
= 1KΩ
A
V
= +5.6, R
F
= 1KΩ
-6
A
V
= +5.6, R
F
= 1KΩ
-135
-180
-8
1M
10M
FREQUENCY (Hz)
Inverting Frequency Response (Gain)
V
CM
= 1.5V, R
F
= 1KΩ, R
L
= 150Ω
+2
100M
1M
10M
FREQUENCY(Hz)
Inverting Frequency Response (Phase)
V
CM
= 1.5V, R
F
= 1KΩ, R
L
= 150Ω
A
V
= -1
100M
1
2
MAGNITUDE (NORMAILZED) (dB)
A
V
= -1
180
0
A
V
= -5.6
-2
A
V
= -2
PHASE (°)
135
A
V
= -5.6
90
A
V
= -2
-4
45
-6
1M
10M
FREQUENCY (Hz)
3dB Bandwidth vs. Die Temperature for Various Gains
RL = 150Ω
100M
0
1M
10M
FREQUENCY (Hz)
3dB Bandwidth vs. Die Temperature for Various Gains
[i=s]This post was last edited by sigma on 2019-5-5 08:42[/i] This system is a gesture recognition device, which uses two FDC2214 evaluation boards to complete the accurate gesture recognition of rock...
The PC and the development board are connected using USB ACTIVESYNC and ETHERNET. When testing with remote tools in .net2005, I found that when testing the connection in device property, no matter whe...
In the Linux kernel code, switching between processes is implemented by the "ljmp" instruction. What is the relationship between GCC's gas and at&t instruction systems and computer hardware structures...
Common options for c6x compilation (I) The c6x compiler is "cl6x.exe" Method of use Cl6x [options] [filenames] Cl6x: Compiler Options: Compiler options Filenames: C or assembly source file Description...
Abstract:
With the increasing complexity of smart vehicle electrical and electronic architectures, the full lifecycle management of vehicle electronic control components faces multiple challe...[Details]
As more and more consumers purchase new energy vehicles, the safety of electric vehicles has become a major concern. This has been particularly prominent following a series of electric vehicle fire...[Details]
In recent years, with the application of the IEC61850 standard and the development and deployment of optoelectronic transformers, the concept of digital substations has been put into practical use ...[Details]
On August 25th, TSMC, the world's leading contract chip manufacturer, attracted significant attention for its decision to build a chip manufacturing facility in Arizona. TSMC primarily manufactures...[Details]
Based on the commutation technology, thyristor rectifiers are classified into two main types. Line-commutated and force-commutated inverters are commonly used, while other commutated inverters, nam...[Details]
Through AI connection technology supported by Qualcomm X85 5G modem and RF and Qualcomm FastConnect 7900 mobile connection system, seamless switching can be achieved between cellular net...[Details]
Compiled from semiengineering
The industry is increasingly concerned about power consumption in AI, but there are no simple solutions. This requires a deep understanding of software and ...[Details]
Silicon Labs (also known as "Silicon Labs"), an innovative leader in low-power wireless connectivity, will showcase its cutting-edge artificial intelligence (AI) and Internet of Things (IoT) solu...[Details]
With the continuous development of ultrasonic technology, ultrasound has been widely used in fields such as inspection, cleaning, welding, and medical treatment, and has even found its way into tex...[Details]
According to foreign media reports, German chipmaker Infineon has recently completed the acquisition of Marvell Technology's automotive Ethernet business for a total transaction amount of US$2.5 bi...[Details]
Siemens software mainly includes PLC, frequency converter, human-machine interface, etc. The current Siemens software can be said to be very stable.
PLC series range from the Siemens S5 series...[Details]
Chip architecture licensing company ARM has hired Amazon's AI chip chief Rami Sinno to help advance its plan to develop its own complete chip, people familiar with the matter said, according to Reu...[Details]
summary
NFC (Near Field Communication) is a short-range, high-frequency wireless communication technology that allows contactless, point-to-point data exchange (within ten centimeters) between...[Details]
When a self-driving car is traveling straight ahead on the road and a vehicle ahead or in an adjacent lane is about to turn left, the system must make a quick and accurate judgment within the compl...[Details]
The development of electric vehicles is unstoppable. More and more people are choosing new energy vehicles. With the subsidies provided by the state and the shortage of resources, new energy vehicl...[Details]
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
