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RN2963CT(TE85L)

Description
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
CategoryDiscrete semiconductor    The transistor   
File Size212KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN2963CT(TE85L) Overview

PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC

RN2963CT(TE85L) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.05 A
Minimum DC current gain (hFE)100
Number of components2
Polarity/channel typePNP
Maximum power dissipation(Abs)0.14 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
RN2961CT~RN2966CT
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2961CT,RN2962CT,RN2963CT
RN2964CT,RN2965CT,RN2966CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
0.9±0.05
Unit: mm
1.0±0.05
0.15±0.03
0.2±0.03
0.6±0.02
Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count, which
enables the manufacture of ever more compact equipment and saves
assembly cost.
Complementary to RN1961CT to RN1966CT
0.2±0.03
0.35±0.02
0.35±0.02
0.075±0.03
0.7±0.03
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2961CT
RN2962CT
R2
RN2963CT
RN2964CT
E
RN2965CT
RN2966CT
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
0.38 +0.02
-0.03
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
CST6
6.COLLECTOR1
B
R1
JEDEC
JEITA
TOSHIBA
2-1K1A
Weight: 1.0 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2961CT to 2966CT
RN2961CT to 2966CT
RN2961CT to 2964CT
RN2965CT, 2966CT
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note1)
T
j
T
stg
Rating
−20
−20
−10
−5
−50
140
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Equivalent Circuit
(top view)
6
Q1
5
4
Q2
1
2
0.05±0.03
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
3
Note1:
Note:
Total rating, mounted on glass-epoxy board of 10mm×10mm×1mmt.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-17

RN2963CT(TE85L) Related Products

RN2963CT(TE85L) RN2964CT(TE85L) RN2961CT(TE85L) RN2966CT(TE85L)
Description PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
Reach Compliance Code unknow unknown unknown unknown
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A
Minimum DC current gain (hFE) 100 120 30 120
Number of components 2 2 2 2
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.14 W 0.14 W 0.14 W 0.14 W
surface mount YES YES YES YES
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
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