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NTP2955
Power MOSFET
−60
V,
−12
A, Single P−Channel, TO−220
Features
•
•
•
•
Low R
DS(on)
Rugged Performance
Fast Switching
Pb−Free Package is Available*
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V
(BR)DSS
−60
V
R
DS(on)
Typ
156 mW @
−10
V
P−Channel
D
I
D
MAX
−12
A
Applications
•
Industrial
•
Automotive
•
Power Supplies
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
t
p
= 10
ms
P
D
I
DM
T
J
,
T
STG
I
S
EAS
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
−60
±20
−12
−9.0
62.5
−2.4
−1.8
2.4
−42
−55
to
175
−12
216
W
A
°C
A
mJ
W
A
Unit
V
V
A
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
D
NT2955G
AYWW
1
2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
=
−30
V, V
G
=
−10
V,
I
PK
=
−12
A, L = 3.0 mH, R
G
= 3.0
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
3
1
G D S
TO−220
CASE 221A
STYLE 5
A
Y
WW
G
T
L
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case
Junction−to−Ambient
−
Steady State (Note 1)
Symbol
R
qJC
R
qJA
Max
2.4
62.5
Unit
°C/W
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NTP2955
NTP2955G
Package
TO−220
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
March, 2006
−
Rev. 2
1
Publication Order Number:
NTP2955/D
NTP2955
ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise stated)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
=
−48
V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
=
−250
mA
−60
67
−1.0
−10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
V
DS
= 0 V, V
GS
=
±20
V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= V
DS
, I
D
=
−250
mA
−2.0
56
−4.0
V
mV/°C
V
GS
=
−10
V, I
D
=
−12
A
V
DS
=
−60
V, I
D
=
−12
A
156
6.0
196
mW
S
507
V
GS
= 0 V, f = 1.0 MHz,
V
DS
=
−25
V
150
48
14
V
GS
=
−10
V, V
DS
=
−48
V,
I
D
=
−12
A
1.6
3.4
6.2
700
250
98
pF
nC
2.5
10
V
GS
=
−10
V, V
DD
=
−30
V,
I
D
=
−12
A, R
G
= 9.1
W
41
27
45
20
80
47
85
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
=
−12
A
T
J
= 25°C
T
J
= 125°C
−1.6
−1.36
53
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
=
−12
A
42
12
126
nC
ns
−2.0
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
2. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTP2955
25
−I
D
, DRAIN CURRENT (A)
T
J
= 25°C
V
GS
=
−10
V
−9.5
V
25
−8.0
V
−7.0
V
−I
D
, DRAIN CURRENT (A)
20
15
10
T
J
=
−55°C
5
0
0
V
GS
=
−10
V
T
J
= 25°C
T
J
= 125°C
20
15
−6.0
V
10
.
5
0
0
−4.0
V
2
4
6
−5.5
V
−5.0
V
−4.5
V
8
10
2
4
6
8
10
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.4
V
GS
=
−10
V
0.3
T = 125°C
0.2
T = 25°C
0.1
T =
−55°C
0.4
T
J
= 25°C
0.3
0.2
V
GS
=
−10
V
0.1
V
GS
=
−15
V
0
0
2
4
6
8
10
12
14
−I
D
, DRAIN CURRENT (A)
0
0
2
4
6
8
10
12
14
−I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current
and Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
2.0
1.5
1.0
0.5
0
−50
I
D
=
−12
A
V
GS
=
−10
V
−I
DSS
, LEAKAGE (nA)
1000
V
GS
= 0 V
100
T
J
= 125°C
10
T
J
= 100°C
−25
0
25
50
75
100
125
150
175
1
0
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation
with Temperature
Figure 6. Drain−to−Source Leakage
versus Voltage
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3
NTP2955
60
50
40
30
V
GS
4
2
0
20
10
0
16
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1100
1000
C, CAPACITANCE (pF)
900
800
700
600
500
400
300
200
100
C
ISS
V
GS
=
−0
V
T
J
= 25°C
T
J
= 25°C
Q
T
V
DS
Q
GS
Q
GD
I
D
=
−12
A
10
8
6
C
RSS
C
ISS
C
OSS
C
RSS
0
−V
DS
5
10
15
20
V
DS
=
−0
V
0
−10
−5
−V
GS
25
0
4
8
12
Q
G
, TOTAL GATE CHARGE, (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
14
100
t
f
t
d(off)
t
r
−I
S
, SOURCE CURRENT (A)
V
DD
=
−30
V
I
D
=
−12
A
V
GS
=
−10
V
t, TIME (ns)
12
10
8
6
4
2
0
0
V
GS
=
−0
V
T
J
= 25°C
10
t
d(on)
1
1
10
100
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
R
G
, GATE RESISTANCE (W)
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
−I
D
, DRAIN CURRENT (A)
V
GS
=
−10
V
SINGLE PULSE
T
J
= 25°C
1 ms
10
10 ms
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
10
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
250
Figure 10. Diode Forward Voltage versus
Current
I
D
=
−12
A
200
150
100
50
0
25
100
100
ms
10
ms
1
dc
0.1
0.1
100
50
75
100
125
150
175
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy
versus Starting Junction Temperature
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4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1200
12
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