a
FEATURES
1.8 V to 5.5 V Single Supply
2 (Typ) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SC70
Fast Switching Times
t
ON
18 ns
t
OFF
12 ns
Typical Power Consumption (<0.01
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
2
CMOS Low Voltage
SPST Switches in SC70 Packages
ADG741/ADG742
FUNCTIONAL BLOCK DIAGRAMS
ADG741
S
D
IN
W)
S
ADG742
D
IN
SWITCHES SHOWN FOR
A LOGIC "1" INPUT
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG741/ADG742 are monolithic CMOS SPST switches.
These switches are designed on an advanced submicron process
that provides low power dissipation yet high switching speed,
low on resistance, low leakage currents and –3 dB bandwidths of
greater than 200 MHz can be achieved.
The ADG741/ADG742 can operate from a single 1.8 V to 5.5 V
supply, making it ideal for use in battery-powered instruments
and with Analog Devices’ new generation of DACs and ADCs.
As can be seen from the Functional Block Diagrams, with a
logic input of “1” the switch of the ADG741 is closed, while
that of the ADG742 is open. Each switch conducts equally well
in both directions when ON.
The ADG741/ADG742 are available in 6-lead SC70 package.
1. 1.8 V to 5.5 V Single Supply Operation. The ADG741/
ADG742 offer high performance, including low on resistance
and fast switching times and is fully specified and guaranteed
with 3 V and 5 V supply rails.
2. Very Low R
ON
(3
Ω
max at 5 V, 5
Ω
max at 3 V). At 1.8 V
operation, R
ON
is typically 40
Ω
over the temperature range.
3. On-Resistance Flatness R
FLAT(ON)
(1
Ω
max).
4. –3 dB Bandwidth >200 MHz.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. Fast t
ON
/t
OFF.
7. Tiny 6-Lead SC70 package.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2000
ADG741/ADG742–SPECIFICATIONS
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On-Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
2
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Charge Injection
Off Isolation
2
3
0.5
1
(V
DD
= 5 V
10%, GND = 0 V. All specifications –40 C to +85 C
unless otherwise noted.)
Unit
V
Ω
typ
Ω
max
Ω
typ
Ω
max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
V
DD
= 5.5 V
Digital Inputs = 0 V or 5 V
V
IN
= V
INL
or V
INH
Test Conditions/Comments
B Version
25 C
–40 C to +85 C
0 V to V
DD
4
1.0
±
0.01
±
0.25
±
0.01
±
0.25
±
0.01
±
0.25
V
S
= 0 V to V
DD
, I
S
= –10 mA;
Test Circuit 1
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
DD
= 5.5 V
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
Test Circuit 2
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
Test Circuit 2
V
S
= V
D
= 1 V, or 4.5 V;
Test Circuit 3
±
0.35
±
0.35
±
0.35
2.4
0.8
0.005
±
0.1
12
18
8
12
5
–55
–75
200
17
17
38
Bandwidth –3 dB
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3 V; Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3 V; Test Circuit 4
V
S
= 2 V, R
S
= 0
Ω,
C
L
= 1 nF;
Test Circuit 5
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF;
Test Circuit 7
0.001
1.0
µA
typ
µA
max
NOTES
1
Temperature ranges are as follows: B Versions: – 40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. 0
ADG741/ADG742
SPECIFICATIONS
1
(V
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
DD
=3V
10%, GND = 0 V. All specifications –40 C to +85 C unless otherwise noted.)
B Version
25 C
–40 C to +85 C
0 V to V
DD
3.5
5
1.5
±
0.01
±
0.25
±
0.01
±
0.25
±
0.01
±
0.25
6
Unit
V
Ω
typ
Ω
max
Ω
typ
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
V
DD
= 3.3 V
Digital Inputs = 0 V or 3 V
0.001
1.0
µA
typ
µA
max
V
IN
= V
INL
or V
INH
Test Conditions/Comments
On-Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
2
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Charge Injection
Off Isolation
V
S
= 0 V to V
DD
, I
S
= –10 mA;
Test Circuit 1
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
DD
= 3.3 V
V
S
= 3 V/1 V, V
D
= 1 V/3 V;
Test Circuit 2
V
S
= 3 V/1 V, V
D
= 1 V/3 V;
Test Circuit 2
V
S
= V
D
= 1 V, or 3 V;
Test Circuit 3
±
0.35
±
0.35
±
0.35
2.0
0.4
0.005
±
0.1
14
20
8
13
4
–55
–75
200
17
17
38
Bandwidth –3 dB
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 2 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 2 V, Test Circuit 4
V
S
= 1.5 V, R
S
= 0
Ω,
C
L
= 1 nF;
Test Circuit 5
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF;
Test Circuit 7
NOTES
1
Temperature ranges are as follows: B Versions: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. 0
–3–
ADG741/ADG742
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C unless otherwise noted)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog, Digital Inputs
2
. . . . . . . . . . . . . . –0.3 V to V
DD
+0.3 V
or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . .150°C
SC70 Package
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 332°C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 120°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . .215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability. Only one absolute maxi-
mum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
Table I. Truth Table
ADG741 In
0
1
ADG742 In
1
0
Switch Condition
OFF
ON
ORDERING GUIDE
Model
ADG741BKS
ADG742BKS
Temperature Range
–40°C to +85°C
–40°C to +85°C
Brand*
SFB
SGB
Package Description
SC70
SC70
Package Option
KS-6
KS-6
*Brand
= Brand on these packages is limited to three characters due to space constraints.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG741/ADG742 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. 0
ADG741/ADG742
PIN CONFIGURATIONS
6-Lead Plastic Surface Mount
(SC70)
TERMINOLOGY
D
1
S
2
GND
3
ADG741/
ADG742
6
V
DD
5
NC
TOP VIEW
4
IN
(Not to Scale)
V
DD
GND
S
D
IN
R
ON
R
FLAT(ON)
NC = NO CONNECT
I
S
(OFF)
I
D
(OFF)
I
D
, I
S
(ON)
V
D
(V
S
)
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
t
ON
t
OFF
Off Isolation
Charge
Injection
Bandwidth
On Response
On Loss
Most Positive Power Supply Potential.
Ground (0 V) Reference.
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input.
Ohmic Resistance Between D and S.
Flatness is defined as the difference between
the maximum and minimum value of on
resistance as measured over the specified
analog signal range.
Source Leakage Current with the Switch “OFF.”
Drain Leakage Current with the Switch “OFF.”
Channel Leakage Current with the Switch “ON.”
Analog Voltage on Terminals D, S.
“OFF” Switch Source Capacitance.
“OFF” Switch Drain Capacitance.
“ON” Switch Capacitance.
Delay between applying the digital control
input and the output switching on. See Test
Circuit 4.
Delay between applying the digital control
input and the output switching off.
A measure of Unwanted Signal Coupling
Through an “OFF” Switch.
A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
The frequency at which the output is attenu-
ated by –3 dBs.
The frequency response of the “ON” switch.
The voltage drop across the “ON” switch seen
on the On Response vs. Frequency plot as how
many dBs the signal is away from 0 dB at very
low frequencies.
REV. 0
–5–
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