FRS430D, FRS430R,
FRS430H
June 1998
3A, 500V, 2.52 Ohm, Rad Hard,
N-Channel Power MOSFETs
Package
TO-257AA
Features
• 3A, 500V, RDS(on) = 2.52
Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
-
-
-
-
-
Meets Pre-Rad Specifications to 100KRAD(Si)
Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
Performance Permits Limited Use to 3000KRAD(Si)
Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
Survives 2E12 Typically If Current Limited to IDM
• Gamma Dot
• Photo Current
• Neutron
- 8.0nA Per-RAD(Si)/sec Typically
- Pre-RAD Specifications for 3E12 Neutrons/cm
2
- Usable to 3E13 Neutrons/cm
2
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Description
The Intersil Corporation has designed a series of SECOND GENERATION hard-
ened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25m
Ω
. Total dose hard-
ness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness rang-
ing from 1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose rate
hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12
with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Symbol
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRS430D, R, H
500
500
3
2
9
±
20
50
20
0.40
9
3
9
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
FRS430D, FRS430R, FRS430H Rev. A
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20k
Ω
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100
µ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
©2001 Fairchild Semiconductor Corporation
FRS430D, FRS430R, FRS430H
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source Breakdown Volts
Gate-Threshold Volts
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero-Gate Voltage
Drain Current
Rated Avalanche Current
Drain-Source On-State Volts
Drain-Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate-Charge Threshold
Gate-Charge On State
Gate-Charge Total
Plateau Voltage
Gate-Charge Source
Gate-Charge Drain
Diode Forward Voltage
Reverse Recovery Time
Junction-To-Case
Junction-To-Ambient
SYMBOL
BVDSS
VGS(th)
IGSSF
IGSSR
IDSS1
IDSS2
IDSS3
IAR
VDS(on)
RDS(on)
td(on)
tr
td(off)
tf
QG(th)
QG(on)
QGM
VGP
QGS
QGD
VSD
TT
R
θ
jc
R
θ
ja
Free Air Operation
ID = 3A, VGD = 0
I = 3A; di/dt = 100A/
µ
s
VDD = 250V, ID = 3A
IGS1 = IGS2
0
≤
VGS
≤
20
TEST CONDITIONS
VGS = 0, ID = 1mA
VDS = VGS, ID = 1mA
VGS = +20V
VGS = -20V
VDS = 500V, VGS = 0
VDS = 400V, VGS = 0
VDS = 400V, VGS = 0, TC = +125
o
C
Time = 20
µ
s
VGS = 10V, ID = 3A
VGS = 10V, ID = 2A
VDD = 250V, ID = 3A
Pulse Width = 3
µ
s
Period = 300
µ
s, Rg = 25
Ω
0
≤
VGS
≤
10 (See Test Circuit)
MIN
500
2.0
-
-
-
-
-
-
-
-
-
-
-
-
0.5
17
32
3
2
10
0.6
-
-
-
MAX
-
4.0
100
100
1
0.025
0.25
9
7.94
2.52
34
60
ns
224
60
3
68
128
12
8
nc
40
1.8
1600
2.5
60
V
ns
o
C/W
UNITS
V
V
nA
nA
mA
A
V
Ω
nc
V
V
DD
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DS
L
V
DS
+
CURRENT I
TRANSFORMER
AS
R
L
-
V
GS
= 12V
DUT
0V
R
GS
0V
t
P
50Ω
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
≤
20V
DUT
50Ω
+
V
DD
-
50V-150V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FRS430D, FRS430R, FRS430H Rev. A
FRS430D, FRS430R, FRS430H
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source
Breakdown Volts
(Note 4, 6)
(Note 5, 6)
Gate-Source
Threshold Volts
(Note 4, 6)
(Note 3, 5, 6)
Gate-Body
Leakage Forward
(Note 4, 6)
(Note 5, 6)
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
(Note 2, 5, 6)
Zero-Gate Voltage
Drain Current
(Note 4, 6)
(Note 5, 6)
Drain-Source
On-State Volts
(Note 1, 4, 6)
(Note 1, 5, 6)
Drain-Source
On Resistance
(Note 1, 4, 6)
(Note 1, 5, 6)
NOTES:
1. Pulse test, 300
µ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E12
5. Gamma = 1000KRAD(Si). Neutron = 3E12
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 10/29/90 on TA 17635 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
SYMBOL
BVDSS
BVDSS
VGS(th)
VGS(th)
IGSSF
IGSSF
IGSSR
IGSSR
IDSS
IDSS
VDS(on)
VDS(on)
RDS(on)
RDS(on)
TYPE
FRS430D, R
FRS430H
FRS430D, R
FRS430H
FRS430D, R
FRS430H
FRS430D, R
FRS430H
FRS430D, R
FRS430H
FRS430D, R
FRS430H
FRS430D, R
FRS430H
TEST CONDITIONS
VGS = 0, ID = 1mA
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = VDS, ID = 1mA
VGS = 20V, VDS = 0
VGS = 20V, VDS = 0
VGS = -20V, VDS = 0
VGS = -20V, VDS = 0
VGS = 0, VDS = 400V
VGS = 0, VDS = 400V
VGS = 10V, ID = 3A
VGS = 16V, ID = 3A
VGS = 10V, ID = 2A
VGS = 14V, ID = 2A
MIN
500
475
2.0
1.5
-
-
-
-
-
-
-
-
-
-
MAX
-
-
4.0
4.5
100
200
100
200
25
100
7.94
11.91
2.52
3.78
UNITS
V
V
V
V
nA
nA
nA
nA
µ
A
µ
A
V
V
Ω
Ω
©2001 Fairchild Semiconductor Corporation
FRS430D, FRS430R, FRS430H Rev. A
Embedded System
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