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H11ADB61SDV

Description
Transistor Output Optocoupler, 2-Element, 5300V Isolation, SURFACE MOUNT, DIP-8
CategoryLED optoelectronic/LED    photoelectric   
File Size99KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

H11ADB61SDV Overview

Transistor Output Optocoupler, 2-Element, 5300V Isolation, SURFACE MOUNT, DIP-8

H11ADB61SDV Parametric

Parameter NameAttribute value
MakerFairchild
package instructionSURFACE MOUNT, DIP-8
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Min70 V
ConfigurationSEPARATE, 2 CHANNELS
Nominal current transfer ratio50%
Maximum dark power100 nA
Maximum forward current0.06 A
Maximum insulation voltage5300 V
Number of components2
Maximum operating temperature100 °C
Minimum operating temperature-55 °C
Optoelectronic device typesTRANSISTOR OUTPUT OPTOCOUPLER
8-PIN BI-DIRECTIONAL
TRANSISTOR OPTOCOUPLER
H11ADB6
DESCRIPTION
The H11ADB series optocouplers have two channels for high density applications.
The inverse parallel channel orientation is ideal for applications which require data
to be both transmitted and received on each side of the isolation boundary. Each
channel consists of a GaAs LED optically coupled to a silicon NPN phototransistor.
8
1
H11ADB61
H11ADB62
FEATURES
• Inverse parallel channel orientation
• High isolation voltage 5300 VAC RMS-1 minute, 7500 VAC PEAK-1 minute
• High BV
CEO
minimum 70 volts
• Two isolated channels per package
• Underwriters Laboratory (UL) recognized file #E90700
ANODE 1
8 COLLECTOR
8
1
8
1
SCHEMATIC
APPLICATIONS
CATHODE 2
7 EMITTER
• AC line/Digital logic
• Digital logic/Digital logic
EMITTER 3
6 CATHODE
COLLECTOR 4
5 ANODE
ABSOLUTE MAXIMUM RATINGS
(No derating required up to 85°C)
Rating
EMITTER
(Each channel)
Forward Current - Continuous
Forward Current - Peak (PW = 1µs, 300pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
(Each channel)
Collector Current - Continuous
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature (wave solder)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
© 2003 Fairchild Semiconductor Corporation
Symbol
Value
Unit
I
F
I
F
(pk)
V
R
P
D
60
3.0
5
100
1.33
50
70
7
150
2.0
-55 to +125
-55 to +100
260 for 10 sec
400
5.33
mA
A
V
mW
mW/°C
mA
V
V
mW
mW/°C
°C
°C
°C
mW
mW/°C
I
C
BV
CEO
BV
ECO
P
D
T
STG
T
OPR
T
SOL
P
D
Page 1 of 8
7/18/03
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