SEMICONDUCTOR
TECHNICAL SPECIFICATION
RECTRON
RBU801M
THRU
RBU807M
VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
FEATURES
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
*
*
*
*
*
*
Low leakage
Low forward voltage
Mounting position: Any
Surge overload rating: 200 amperes peak
Ideal for printed circuit boards
High forward surge current capability
RBU
.880 (22.3)
.860 (21.8)
.160 (4.1)
.140 (3.5)
.080 (2.03)
.060 (1.52)
.740 (18.8)
.720 (18.3)
.140 (3.56)
.130 (3.30)
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
.512 (13.0)
.085 (2.16)
.075 (1.90)
.710 (18.0)
.690 (17.5)
.050 (1.27)
.040 (1.02)
.210 (5.33)
.190 (4.83)
.080 (2.03)
.065 (1.65)
.022 (0.56)
.018 (0.46)
.100 (2.54)
.085 (2.16)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 75 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
Typical Thermal Resistance
(Note 1)
Operating and Storage Temperature Range
o
o
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
θ
JA
R
θ
JC
T
J,
T
STG
RBU801M RBU802M RBU803M RBU804M RBU805M RBU806M RBU807M UNITS
50
35
50
100
70
100
200
140
200
400
280
400
8.0
200
26
3.4
-55 to + 150
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
0
C/ W
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per element at 8.0A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@T
A
= 25 C
@T
A
= 125 C
o
o
SYMBOL
V
F
I
R
RBU801M RBU802M RBU803M RBU804M RBU805M RBU806M RBU807M UNITS
1.1
5.0
0.5
Volts
uAmps
mAmps
2013-04
REV: B
NOTE: 1. Units mounted in free air, no heatsink on P.C.B., 0.5x0.5” (12x12mm) copper pads, 0.375” lead length.
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
RATING AND CHARACTERISTICS CURVES ( RBU801M THRU RBU807M )
AVERAGE FORWARD OUTPUT CURRENT, (A)
8.0
INSTANTANEOUS FORWARD CURRENT, (A)
20
10
4.0
6.0
4.0
1.0
0.4
pulse test per
one diode
2.0
0
0
50
100
O
150
0.1
0.4
0.6
0.8
1.0
1.2
CASE TEMPERATURE, ( C)
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG.1 TYPICAL FORWARD CURRENT
DERATING CURVE
28
24
POWER DISSIPATION, (W)
FIG.2 TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
240
PEAK FORWARD SURGE CURRENT, (A)
sine wave
T
J
=150
O
C
200
160
120
80
40
0
1
8.3mS Single Half Sine-Wave
JEDEC Method
20
16
12
8
4
0
0
2
4
6
8
10
12
14
2
5
10
20
50
100
AVERAGE RECTIFIER FORWARD CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
FIG.3 FORWARD DISSIPATION
INSTANTANEOUS REVERSE CURRENT, (uA)
1000
FIG.4 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
T
A
= 100
O
C
10
T
A
= 25
O
C
1.0
0.1
0
20
40
60
80
100
120
140
PERCENT RATED PEAK REVERSE VOLTAGE, (%)
FIG.5 TYPICAL REVERSE CHARACTERISTICS
Microcontroller MCU
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