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P6FMBJ8.2C

Description
Trans Voltage Suppressor Diode, 600W, 6.63V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size35KB,5 Pages
ManufacturerRectron
Environmental Compliance
Download Datasheet Parametric View All

P6FMBJ8.2C Overview

Trans Voltage Suppressor Diode, 600W, 6.63V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2

P6FMBJ8.2C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRectron
Parts packaging codeDO-214AA
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW ZENER IMPEDANCE
Maximum breakdown voltage9.02 V
Minimum breakdown voltage7.38 V
Maximum clamping voltage12.5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
polarityBIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage6.63 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS
P6FMBJ
SERIES
SURFACE MOUNT GPP
GPP TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 5.0 WATTS STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
600 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
DO-214AA
0.083 (2.11)
0.077 (1.96)
0.180 (4.57)
0.160 (4.06)
0.155 (3.94)
0.130 (3.30)
Ratings at 25 C ambient temperature unless otherwise specified.
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P6FMBJ6.8 thru P6FMBJ400
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Peak Power Dissipation with a 10/1000uS (Note 1,2 Fig.1)
Peak Pulse Durrent with a 10/1000uS waveform
( Note 1, Fig.3 )
Steady State Power Dissipation at T
L
= 75 C ( Note 2 )
Peak Forward Surge Current, 8.3mS single half sine wave super-
imposed on rated load (Jedec Method)(Note 3,2) unidirectional only
Maximum Instantaneous Forward Voltage at 50A for
unidirectional only ( Note 3,4 )
Operating and Storage Temperature Range
o
o
SYMBOL
P
PPM
I
PPM
P
M
(
AV
)
I
FSM
V
F
T
J
, T
STG
VALUE
Minimum 600
SEE TABLE 1
5.0
100
SEE NOTE 4
-55 to + 150
UNITS
Watts
Amps
Watts
Amps
Volts
0
C
2002-12
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
2. Mounted on 0.2 X 0.2” ( 5.0 X 5.0mm ) copper pad to each terminal.
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
4. V
F
= 3.5V on P6FMBJ6.8 thru P6FMB90 devices and V
F
= 5.0V on P6FMBJ100 thur P6FMBJ400 devices.
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