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MRF281

Description
S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size310KB,8 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MRF281 Overview

S BAND, Si, N-CHANNEL, RF POWER, MOSFET

MRF281 Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage65 V
Processing package descriptionNI-200S, CASE 458B-03, 2 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeFLATPACK
surface mountYes
Terminal formFLAT
Terminal locationpair
Packaging MaterialsCeramic, Metal-SEALED COFIRED
structuresingle
Shell connectionsource
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeRF power
highest frequency bandS band
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF281/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications.
Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts
Output Power — 4 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –29 dBc
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Available in Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
MRF281SR1
MRF281ZR1
2000 MHz, 4 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B–03, STYLE 1
(NI–200S)
(MRF281SR1)
CASE 458C–03, STYLE 1
(NI–200Z)
(MRF281ZR1)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
±20
20
0.115
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
5.74
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0)
Gate–Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
V
(BR)DSS
I
DSS
I
GSS
65
74
10
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF281SR1 MRF281ZR1
1

MRF281 Related Products

MRF281 MRF281SR1 MRF281ZR1
Description S BAND, Si, N-CHANNEL, RF POWER, MOSFET S BAND, Si, N-CHANNEL, RF POWER, MOSFET S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Number of terminals 2 2 2
surface mount Yes YES YES
Terminal form FLAT FLAT GULL WING
Terminal location pair DUAL DUAL
Shell connection source SOURCE SOURCE
Number of components 1 1 1
transistor applications amplifier AMPLIFIER AMPLIFIER
Transistor component materials silicon SILICON SILICON
highest frequency band S band S BAND S BAND
Is it Rohs certified? - conform to conform to
Maker - Motorola ( NXP ) Motorola ( NXP )
package instruction - FLATPACK, R-CDFP-F2 SMALL OUTLINE, R-CDSO-G2
Reach Compliance Code - unknow unknow
Configuration - SINGLE SINGLE
Minimum drain-source breakdown voltage - 65 V 65 V
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-CDFP-F2 R-CDSO-G2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 200 °C 200 °C
Package body material - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape - RECTANGULAR RECTANGULAR
Package form - FLATPACK SMALL OUTLINE
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 20 W 20 W
Certification status - Not Qualified Not Qualified
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