P6KE6.8 thru P6KE540A
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in Unidirectional and Bidirectional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-204AC, molded epoxy over passivated chip
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
DO-204AC (DO-15)
MAJOR RATINGS AND CHARACTERISTICS
V
(BR)
Unidirectional
V
(BR)
Bidirectional
P
PPM
P
D
I
FSM
(Unidirectional only)
T
j
max.
6.8 V to 540 V
6.8 V to 440 V
600 W
5.0 W
100 A
175 °C
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional types, use C or CA suffix
(e.g. P6KE440CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000 µs
waveform
(1)
(2)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
600
see next table
5.0
100
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave
Maximum instantaneous forward voltage at 50 A for unidirectional only
(3)
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum
(3) V
F
= 3.5 V for P6KE220(A) & below; V
F
= 5.0 V for P6KE250(A) & above
Document Number 88369
20-Jun-06
www.vishay.com
1
P6KE6.8 thru P6KE540A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
DEVICE TYPE
V
(BR)
AT I
T (1)
(V)
MIN
(+)
MAX
484
462
528
504
561
535
594
567
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE V
WM
(V)
356
376
389
408
413
434
437
459
MAXIMUM
REVERSE
LEAKAGE
AT V
WM (3)
I
D
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
PEAK
MAXIMUM
PULSE
CLAMPING
CURRENT VOLTAGE AT
I
PPM
V
C
(V)
I
PPM (2)
(A)
0.95
1.00
0.88
0.91
0.82
0.86
0.78
0.81
631
602
686
658
729
698
772
740
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V
(BR)
(%/°C)
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
P6KE440
396
418
432
456
459
485
486
513
(+)
P6KE440A
P6KE480
P6KE480A
P6KE510
P6KE510A
P6KE540
P6KE540A
Note:
(+)
Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bidirectional types with V
WM
of 10 volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
SYMBOL
R
θJL
R
θJA
VALUE
20
75
UNIT
°C/W
°C/W
ORDERING INFORMATION
PREFERRED P/N
P6KE6.8A-E3/54
UNIT WEIGHT (g)
0.432
PREFERRED PACKAGE CODE
54
BASE QUANTITY
4000
DELIVERY MODE
13" Diameter Paper Tape & Reel
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Document Number 88369
20-Jun-06
P6KE6.8 thru P6KE540A
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
6000
P
PPM
, Peak Pulse Power (kW)
C
J
, Junction Capacitance (pF)
Non-repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
Measured at
Zero Bias
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1
100
Measured at Stand-off
Voltage V
WM
0.1
0.1
µs
10
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
1.0
10
100
200
td - Pulse
Width
(sec.)
V
(BR)
- Breakdown
Voltage
(V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance Uni-Directional
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
6
5
60 Hz
Resistive or
Inductive Load
75
P
D
, Power Dissipation (W)
4
3
L = 0.375" (9.5 mm)
Lead Lengths
50
2
1
25
0
0
25
50
75
100
125
150
175
200
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temperature (°C)
T
L
- Lead Temperature (°C)
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
150
Figure 5. Power Derating Curve
200
tr = 10
µsec.
Peak
Value
I
PPM
I
FSM -
Peak Forward Surge Current (A)
I
PPM
- Peak Pulse Current,
%
I
RSM
100
T
J
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50
%
of I
PPM
Uni-Directional Only
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
Half
Value
- IPP
2
I
PPM
50
50
10/1000
µsec. Waveform
as defined
by
R.E.A.
td
0
0
1.0
2.0
3.0
4.0
10
1
5
10
50
100
t - Time (ms)
Number
of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive Forward Surge Current
Document Number 88369
20-Jun-06
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