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BZT52C51SR9G

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size242KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZT52C51SR9G Overview

Zener Diode,

BZT52C51SR9G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
BZT52C2V4S thru BZT52C75S
Taiwan Semiconductor
Small Signal Product
5% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- Surface Mount Device Type
- VZ Tolerance Selection of ±5%
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOD-323F
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight : 4.02 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Forward Voltage
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature Range
(Note 1)
@ I
F
= 10mA
SYMBOL
V
F
P
D
R
θJA
T
J
, T
STG
VALUE
1
200
625
-65 to +150
UNIT
V
mW
o
C/W
o
C
Note 1: Valid provided that electrodes are kept at ambient temperature.
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1408005
Version: E14
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