AP65PN1R4I
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% R
g
& UIS Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
3
650V
1.45Ω
5.2A
S
Description
AP65PN1R4 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings@T
j
=25 C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
3
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
4
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
+30
5.2
3.3
20.8
32.9
1.92
13.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
mJ
℃
℃
o
.
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.8
65
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201511101
AP65PN1R4I
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed T
Jmax.
.
4.Starting T
j
=25
o
C , V
DD
=50V , L=1mH , R
G
=25Ω
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
650
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
-
-
9
-
-
32
8
13
40
40
140
36
44
9
1.5
Typ.
-
320
1.7
Max. Units
-
1.45
5
-
100
+100
51
-
-
-
-
-
-
-
-
3
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=2.5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=3A
V
DS
=480V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=3A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=3A
R
G
=50Ω
V
GS
=10V
V
GS
=0V
V
DS
=100V
f=1.0MHz
f=1.0MHz
Test Conditions
I
S
=3A, V
GS
=0V
I
S
=3A, V
GS
=0V
dI/dt=100A/µs
1250 2000
.
Source-Drain Diode
Max. Units
1.5
-
-
V
ns
uC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP65PN1R4I
16
8
T
C
=25 C
I
D
, Drain Current (A)
12
o
T
C
=150 C
I
D
, Drain Current (A)
10V
8.0V
7.0V
6
o
0.37Ω
4
10V
9.0V
8.0V
7.0V
6.0V
8
V
G
=6.0V
4
2
V
G
=5.0V
0
0
10
20
30
40
0
0
8
16
24
32
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.6
4
I
D
=2.5A
T
C
=25
o
C
Normalized R
DS(ON)
2.2
I
D
=2.5A
V
G
=10V
3
R
DS(ON)
(
Ω
)
1.8
.
2
1.4
1
1
5
6
7
8
9
10
0
-100
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10
I
D
=250uA
8
1.6
Normalized V
GS(th)
I
S
(A)
6
1.2
T
j
= 150
o
C
4
T
j
= 25
o
C
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0
-100
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature (
o
C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP65PN1R4I
12
f=1.0MHz
2000
10
I
D
=3A
V
DS
=480V
1600
V
GS
, Gate to Source Voltage (V)
8
6
C (pF)
1200
0.37Ω
C
iss
800
4
400
2
0
0
10
20
30
40
0
0
100
200
300
400
500
600
C
oss
C
rss
700
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
10
Operation in this area
limited by R
DS(ON)
10us
0.2
I
D
(A)
1
100us
0.1
.
1ms
0.1
0.1
0.05
P
DM
t
T
0.02
0.01
T
C
=25 C
Single Pulse
0.001
1
10
100
o
10ms
100ms
DC
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
40
2
I
D
=1mA
P
D
, Power Dissipation (W)
1.6
30
Normalized BV
DSS
0
50
100
150
1.2
20
0.8
10
0.4
0
0
-100
-50
0
50
100
150
T
C
, Case Temperature ( C )
o
T
j
, Junction Temperature ( C)
o
Fig 11. Total Power Dissipation
Fig 12. Normalized BV
DSS
v.s. Junction
Temperature
4
AP65PN1R4I
MARKING INFORMATION
Part Number
65PN1R4
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
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