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MJH6284 (NPN),
MJH6287 (PNP)
Preferred Device
Darlington Complementary
Silicon Power Transistors
These devices are designed for general-purpose amplifier and
low-speed switching motor control applications.
Features
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•
•
•
•
Similar to the Popular NPN 2N6284 and the PNP 2N6287
Rugged RBSOA Characteristics
Monolithic Construction with Built-in Collector-Emitter Diode
Pb-Free Packages are Available*
DARLINGTON 20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS, 160 WATTS
MARKING
DIAGRAM
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
- Continuous
- Peak
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
T
J
, T
stg
Max
100
100
5.0
20
40
0.5
160
1.28
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
A
=
Y
=
WW
=
G
=
MJH628x =
Assembly Location
Year
Work Week
Pb-Free Package
Device Code
x = 4 or 7
SOT-93
(TO-218)
CASE 340D
AYWWG
MJH628x
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Case
Symbol
R
qJC
Max
0.78
Unit
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
160
PD , POWER DISSIPATION (WATTS)
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
175
200
MJH6287
MJH6284
ORDERING INFORMATION
Device
Package
SOT-93
SOT-93
(Pb-Free)
SOT-93
SOT-93
(Pb-Free)
Shipping
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
MJH6284G
MJH6287G
Preferred
devices are recommended choices for future use
and best overall value.
Figure 1. Power Derating
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
1
October, 2007 - Rev. 6
Publication Order Number:
MJH6284/D
MJH6284 (NPN), MJH6287 (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (I
C
= 0.1 Adc, I
B
= 0)
Collector Cutoff Current (V
CE
= 50 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc)
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc, T
C
= 150_C)
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 10 Adc, V
CE
= 3.0 Vdc)
(I
C
= 20 Adc, V
CE
= 3.0 Vdc)
Collector-Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 40 mAdc)
(I
C
= 20 Adc, I
B
= 200 mAdc)
Base-Emitter On Voltage (I
C
= 10 Adc, V
CE
= 3.0 Vdc)
Base-Emitter Saturation Voltage (I
C
= 20 Adc, I
B
= 200 mAdc)
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
Small-Signal Current Gain (I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Typical
Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time
1. Pulse test: Pulse Width = 300
ms,
Duty Cycle = 2.0%.
V
CC
= 30 Vdc, I
C
= 10 Adc
I
B1
= I
B2
= 100 mA
Duty Cycle = 1.0%
Symbol
t
d
t
r
t
s
t
f
NPN
0.1
0.3
1.0
3.5
PNP
0.1
0.3
1.0
2.0
Unit
ms
MJH6284
MJH6287
h
fe
f
T
C
ob
-
-
300
400
600
-
-
4.0
-
MHz
pF
h
FE
750
100
V
CE(sat)
-
-
V
BE(on)
V
BE(sat)
-
-
2.0
3.0
2.8
4.0
Vdc
Vdc
18,000
-
Vdc
-
V
CEO(sus)
I
CEO
I
CEX
-
-
I
EBO
-
0.5
5.0
2.0
mAdc
100
-
-
1.0
Vdc
mAdc
mAdc
Symbol
Min
Max
Unit
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
TUT
V2
APPROX
+12 V
0
V1
APPROX
- 8.0 V
t
r
, t
f
,
≤
10 ns
DUTY CYCLE = 1.0%
51
R
B
V
CC
- 30 V
R
C
SCOPE
NPN
MJH6284
COLLECTOR
PNP
MJH6287
COLLECTOR
BASE
D
1
+ 4.0 V
25
ms
for t
d
and t
r
, D
1
is disconnected
and V2 = 0
≈
8.0 k
≈
50
BASE
EMITTER
EMITTER
For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
Figure 3. Darlington Schematic
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2
MJH6284 (NPN), MJH6287 (PNP)
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.05
0.02
0.01
SINGLE PULSE
R
qJC
(t) = r(t) R
qJC
R
qJC
= 0.78°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
50
P
(pk)
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200 300
500
1000
0.02 0.03
0.05
Figure 4. Thermal Response
FBSOA, FORWARD BIAS SAFE OPERATING AREA
50
IC, COLLECTOR CURRENT (AMPS)
20
10
5.0
2.0
1.0
0.5
SECOND BREAKDOWN LIMITED
0.1 ms
0.5 ms
1.0 ms
5.0 ms
dc
T
J
= 150°C
0.2
0.1
0.05
2.0
BONDING WIRE LIMITED
THERMAL LIMITATION
@T
C
= 25°C (SINGLE PULSE)
5.0
10
20
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. MJH6284, MJH6287
50
IC, COLLECTOR CURRENT (AMPS)
FORWARD BIAS
40
30
DUTY CYCLE = 10%
20
L = 200
mH
I
C
/I
B
≥
100
T
C
= 25°C
V
BE(off)
= 0 - 5.0 V
R
BE
= 47
W
0
30
100
60
10
20
40
80
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
110
10
0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
- V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 6. Maximum RBSOA, Reverse Bias
Safe Operating Area
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3
MJH6284 (NPN), MJH6287 (PNP)
NPN
3000
2000
hFE, DC CURRENT GAIN
T
J
= 150°C
1000
25°C
500
300
200
150
0.2
0.3
0.5
- 55°C
1.0
2.0
3.0
5.0 7.0
10
20
V
CE
= 3.0 V
3000
hFE, DC CURRENT GAIN
2000
5000
V
CE
= 3.0 V
T
J
= 150°C
25°C
PNP
1000
700
500
300
0.2
- 55°C
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 7. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1.0
2.0 3.0 5.0
10
20 30
I
C
= 5.0 A
50
100 200 300 500
1000
I
C
= 10 A
I
C
= 15 A
T
J
= 25°C
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1.0
2.0 3.0 5.0
10
20 30
50
I
C
= 5.0 A
100 200 300 500 1000
I
C
= 10 A
I
C
= 15 A
I
B
, BASE CURRENT (mA)
I
B
, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
3.0
T
J
= 25°C
V, VOLTAGE (VOLTS)
3.0
T
J
= 25°C
2.5
V, VOLTAGE (VOLTS)
2.5
2.0
V
BE
@ V
CE
= 3.0 V
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
2.0
V
BE(sat)
@ I
C
/I
B
= 250
1.5
V
BE(on)
@ V
CE
= 3.0 V
1.5
1.0
1.0
V
CE(sat)
@ I
C
/I
B
= 250
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 9. “On” Voltages
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