Bulletin I0138J rev. A 05/00
IR207LM..CS02CB SERIES
FAST RECOVERY DIODES
Junction Size:
Wafer Size:
V
RRM
Class:
Passivation Process:
Rectangular 207 x 157 mils
4"
200 to 600 V
Glassivated MOAT
Reference IR Packaged Part:
20ETF Series
Major Ratings and Characteristics
Parameters
V
FM
V
RRM
Maximum Forward Voltage
Reverse Breakdown Voltage Range
Units
1300 mV
200 to 600 V
Test Conditions
T
J
= 25°C, I
F
= 20 A
T
J
= 25°C, I
RRM
= 100 µA
(1)
(1)
Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
207 x 157 mils (5.26x3.99 mm) - see drawing
100 mm, with std. < 110 > flat
260 µm
45 µm
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination
Document Number: 93889
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1
IR207LM..CS02CB Series
Bulletin I0138J rev. A 05/00
Ordering Information Table
Device Code
IR
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
207
2
L
3
M
4
06
5
C
6
S02
7
CB
8
Type of Device: L = Wire Bondable Fast Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = V
RRM
Metallization: C = Aluminium (Anode) - Silver (Cathode)
T
rr
code: S02 = 200 nsec
CB
= Probed Uncut Die (wafer in box)
Available Class
02 = 200 V
04 = 400 V
06 = 600 V
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimeters (mils)
Document Number: 93889
www.vishay.com
2
IR207LM..CS02CB Series
Bulletin I0138J rev. A 05/00
Wafer Layout
TOP VIEW
N° 304 Basic Cells
All dimensions are in millimeters
Document Number: 93889
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
®
, IR
®
, the IR logo, HEXFET
®
, HEXSense
®
, HEXDIP
®
, DOL
®
, INTERO
®
, and POWIRTRAIN
®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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