Bulletin I0103J 10/01
IR390DM..CCB SERIES
STANDARD RECOVERY DIODES
Junction Size:
Wafer Size:
V
RRM
Class:
Passivation Process:
Reference IR Packaged Part:
Rectangular 390 X 270 mils
4"
800 to 1200 V
Glassivated MOAT
85EPS Series
Major Ratings and Characteristics
Parameters
V
FM
V
RRM
Maximum Forward Voltage
Reverse Breakdown Voltage Range
Units
1.15 V
800 to 1200 V
Test Conditions
T
J
= 25°C, I
F
= 85 A
T
J
= 25°C, I
RRM
= 100 µA
(1)
(1)
Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
390 x 270 mils (9.91x6.86 mm) - see drawing
100 mm, with std. < 110 > flat
300 µm, ± 10 µm
45 µm
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination
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1
IR390DM..CCB Series
Bulletin I0103J 10/01
Ordering Information Table
Device Code
IR
1
390
2
D
3
M
4
12
5
C
6
CB
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: D = Wire Bondable Standard Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = V
RRM
Metallization: C = Aluminium (Anode) - Silver (Cathode)
CB
= Probed Uncut Die (wafer in box)
Available Class
08 = 800 V
10 = 1000V
12 = 1200 V
None = Probed Die in chip carrier
Outline Table
All dimensions are in microns (mils)
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