DISCRETE SEMICONDUCTORS
DATA SHEET
BB155
Low-voltage variable capacitance
diode
Product specification
Supersedes data of 1996 Sep 20
2004 Mar 01
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
FEATURES
•
Very low capacitance spread
•
Excellent linearity
•
Low series resistance
•
Very small plastic SMD package.
APPLICATIONS
•
Voltage controlled oscillators (VCO), especially in
mobile communication equipment.
DESCRIPTION
The BB155 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD323 very
small plastic SMD package.
Marking code:
PE.
The marking bar indicates the cathode.
1
2
BB155
PINNING
PIN
1
2
cathode
anode
DESCRIPTION
sym008
Top view
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BB156
−
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
operating junction temperature
PARAMETER
MIN.
−
−
−55
−55
MAX.
10
20
+150
+125
UNIT
V
mA
°C
°C
2004 Mar 01
2
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
R
r
s
C
d
PARAMETER
reverse current
diode series resistance
diode capacitance
CONDITIONS
V
R
= 10 V; see Fig.3
V
R
= 10 V; T
j
= 85
°C;
see Fig.3
f = 100 MHz; C
d
= 30 pF
V
R
= 0.34 V; f = 1 MHz; see Figs 2 and 4
V
R
= 2.82 V; f = 1 MHz; see Figs 2 and 4
MIN.
−
−
−
45.2
24.55
TYP.
−
−
0.35
−
−
BB155
MAX.
10
200
0.6
49.8
26.7
UNIT
nA
nA
Ω
pF
pF
2004 Mar 01
3
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
GRAPHICAL DATA
BB155
handbook, full pagewidth
50
MBH582
Cd
(pF)
40
30
20
10
0
10
−1
f = 1 MHz; T
j
= 25
°C.
1
10
VR (V)
10
2
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
10
3
I
R
(nA)
mlc816
10
3
handbook, halfpage
MBH583
(K
−1
)
TC d
10
2
10
4
10
0
50
T
j
(°C)
100
10
5
10
1
1
10
VR (V)
10
2
T
j
= 0
°C
to 85
°C.
Fig.4
Fig.3
Reverse current as a function of junction
temperature; maximum values.
Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
2004 Mar 01
4
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
BB155
SOD323
D
A
E
X
H
D
v
M
A
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A
1
max
0.05
b
p
0.40
0.25
c
0.25
0.10
D
1.8
1.6
E
1.35
1.15
H
D
2.7
2.3
L
p
0.45
0.15
Q
0.25
0.15
v
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
REFERENCES
IEC
JEDEC
JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
03-12-17
2004 Mar 01
5
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