Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
| Parameter Name | Attribute value |
| Maker | Vishay |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 20 V |
| Maximum drain current (ID) | 2.8 A |
| Maximum drain-source on-resistance | 0.085 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-236 |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 10 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Transistor component materials | SILICON |
| SI2302DST | SI2302DSTT1 | SI2302DSTT2-E3 | SI2302DSTT1-E3 | SI2302DST-E3 | SI2302DSTT2 | |
|---|---|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown | compliant | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
| Maximum drain current (ID) | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A | 2.8 A |
| Maximum drain-source on-resistance | 0.085 Ω | 0.085 Ω | 0.085 Ω | 0.085 Ω | 0.085 Ω | 0.085 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maker | Vishay | - | Vishay | Vishay | Vishay | Vishay |
| JESD-609 code | e0 | - | e3 | e3 | e3 | - |
| Terminal surface | TIN LEAD | - | MATTE TIN | MATTE TIN | MATTE TIN | - |
| Is it Rohs certified? | - | incompatible | conform to | conform to | conform to | incompatible |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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