Si2304DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.117 @ V
GS
= 10 V
0.190 @ V
GS
= 4.5 V
I
D
(A)
2.5
2.0
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2304DS (A4)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
2.5
2.0
Unit
V
A
10
1.25
1.25
W
0.80
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Ambient
c
Notes
a. Surface Mounted on FR4 Board, t
v
5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70756
S-63633—Rev. D, 01-Nov-99
www.vishay.com
S
FaxBack 408-970-5600
R
thJA
166
Symbol
Limit
100
Unit
_C/W
1
Si2304DS
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(
BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= 30 V, V
GS
= 1.0 V, T
J
=25_C
On-State Drain Current
a
I
D(on)
V
DS
w
4.5 V, V
GS
= 10 V
V
DS
w
4.5 V, V
GS
= 4.5 V
V
GS
= 10 V, I
D
= 2.5 A
r
DS(on)
V
GS
= 4.5 V, I
D
= 2.0 A
Forward Transconductance
a
Diode Forward Voltage
g
fs
V
SD
V
DS
= 4.5 V, I
D
= 2.5 A
I
S
= 1.25 A, V
GS
= 0 V
0.142
4.6
0.77
1.2
0.190
S
V
6
A
4
0.092
0.117
W
30
V
1.5
"100
0.5
10
1
mA
A
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source On-Resistance
a
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gt
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= 15 V V
GS
= 0 V, f = 1 MHz
V,
V
MH
V
DS
= 15 V V
GS
= 10 V I
D
= 2.5 A
V,
V,
25
V
DS
= 15 V, V
GS
= 5 V, I
D
= 2.5 A
2.4
4.5
0.8
1.0
240
110
17
pF
F
4
10
nC
C
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 15
W
V,
I
D
^
1 A, V
GEN
= 10 V R
G
= 6
W
A
V,
8
12
17
8
20
30
ns
35
20
www.vishay.com
S
FaxBack 408-970-5600
2
Document Number: 70756
S-63633—Rev. D, 01-Nov-99
Si2304DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
Output Characteristics
10
Transfer Characteristics
V
GS
= 10 V - 5 V
8
I D – Drain Current (A)
I D – Drain Current (A)
8
6
4V
6
4
4
T
C
= 125_C
2
25_C
–55_C
2
0V
>
0
2
4
6
8
3V
0
10
0
0
V
DS
– Drain-to-Source Voltage (V)
1
2
3
4
V
GS
– Gate-to-Source Voltage (V)
5
On-Resistance vs. Drain Current
0.30
500
Capacitance
r DS(on)– On-Resistance (
W
)
0.24
V
GS
= 4.5 V
0.18
C – Capacitance (pF)
400
300
C
iss
200
C
oss
100
C
rss
0.12
V
GS
= 10 V
0.06
0
0
2
4
6
8
10
0
0
6
12
18
24
30
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 2.5 A
V GS – Gate-to-Source Voltage (V)
Gate Charge
1.8
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.5 A
r DS(on)– On-Resistance (
W
)
(Normalized)
0
1
2
3
4
5
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70756
S-63633—Rev. D, 01-Nov-99
www.vishay.com
S
FaxBack 408-970-5600
3
Si2304DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
0.6
On-Resistance vs. Gate-to-Source Voltage
0.5
r DS(on)– On-Resistance (
W
)
I S – Source Current (A)
0.4
0.3
I
D
= 2.5 A
T
J
= 150_C
T
J
= 25_C
0.2
0.1
1
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.3
0.2
0.1
V GS(th) Variance (V)
–0.0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
–50
0
0.01
2
I
D
= 250
mA
Power (W)
8
10
Single Pulse Power
6
T
C
= 25_C
Single Pulse
4
–25
0
25
50
75
100
125
150
0.10
1.00
Time (sec)
10.00
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
4
Document Number: 70756
S-63633—Rev. D, 01-Nov-99
MCU
京公网安备 11010802033920号
EEWORLD
