
DIODE SILICON, STABISTOR DIODE, Stabistor Diode
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| package instruction | R-PDSO-G3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | STABISTOR DIODE |
| Maximum forward voltage (VF) | 0.96 V |
| Minimum forward voltage (VF) | 0.87 V |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| BAS17TRL | BZV81TRL | BZV80TRL | BZV80TRL13 | BZV81TRL13 | BA314L | BA314LTRL13 | BA314LTRL | BAS17TRL13 | |
|---|---|---|---|---|---|---|---|---|---|
| Description | DIODE SILICON, STABISTOR DIODE, Stabistor Diode | DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, Voltage Reference Diode | DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, Voltage Reference Diode | DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, Voltage Reference Diode | DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, Voltage Reference Diode | DIODE SILICON, STABISTOR DIODE, Stabistor Diode | DIODE SILICON, STABISTOR DIODE, Stabistor Diode | DIODE SILICON, STABISTOR DIODE, Stabistor Diode | DIODE SILICON, STABISTOR DIODE, Stabistor Diode |
| Maker | NXP | NXP | NXP | NXP | NXP | NXP | NXP | NXP | NXP |
| package instruction | R-PDSO-G3 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | R-PDSO-G3 |
| Reach Compliance Code | compliant | unknown | unknown | unknown | unknown | unknown | unknown | unknown | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | STABISTOR DIODE | ZENER DIODE | ZENER DIODE | ZENER DIODE | ZENER DIODE | STABISTOR DIODE | STABISTOR DIODE | STABISTOR DIODE | STABISTOR DIODE |
| JESD-30 code | R-PDSO-G3 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 3 |
| Package body material | PLASTIC/EPOXY | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | RECTANGULAR |
| Package form | SMALL OUTLINE | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | SMALL OUTLINE |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| Terminal form | GULL WING | WRAP AROUND | WRAP AROUND | WRAP AROUND | WRAP AROUND | WRAP AROUND | WRAP AROUND | WRAP AROUND | GULL WING |
| Terminal location | DUAL | END | END | END | END | END | END | END | DUAL |
| Maximum forward voltage (VF) | 0.96 V | - | - | - | - | 0.94 V | 0.94 V | 0.94 V | 0.96 V |
| Minimum forward voltage (VF) | 0.87 V | - | - | - | - | 0.85 V | 0.85 V | 0.85 V | 0.87 V |
| Shell connection | - | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | - |