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K6T2008V2A-FF850

Description
Standard SRAM, 256KX8, 85ns, CMOS, PBGA36, 6 X 7 MM, FBGA-48/36
Categorystorage    storage   
File Size192KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K6T2008V2A-FF850 Overview

Standard SRAM, 256KX8, 85ns, CMOS, PBGA36, 6 X 7 MM, FBGA-48/36

K6T2008V2A-FF850 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeBGA
package instructionTFBGA,
Contacts36
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time85 ns
JESD-30 codeR-PBGA-B36
length7 mm
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals36
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
width6 mm
K6T2008V2A, K6T2008U2A Family
Document Title
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
1.0
2.0
History
Design target
Finalize
Revised
- Add FBGA type package
Draft Data
May 26, 1998
October 8, 1998
July 21, 1999
Remark
Advance
Final
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
Revision 2.0
July 1999
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