KSB744/744A
KSB744/744A
Audio Frequency Power Amplifier
• Complement to KSD794/KSD794A
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
TJ
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
: KSB744
: KSB744A
Parameter
Value
-70
-45
-60
-5
-3
-5
-0.6
1
10
150
-55 ~ 150
Units
V
V
V
V
A
A
A
W
W
°C
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= -45V, I
E
= 0
V
EB
= -3V, I
C
= 0
V
CE
= -5V, I
C
= -20mA
V
CE
= -5V, I
C
= -0.5A
I
C
= -1.5A, I
C
= -0.15A
I
C
= -1.5A, I
B
= -0.15A
V
CE
= -5V, I
C
= -0.1A
V
CB
= -10V, I
E
= 0
f = 1MHz
30
60
120
100
-0.5
-0.8
45
60
Min.
Typ.
Max.
-1
-1
320
-2
-2
V
V
MHz
pF
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Cassification
Classification
h
FE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB744/744A
Typical Characteristics
-1.6
-1000
V
CE
= -5V
Ic[A], COLLECTOR CURRENT
h
FE
, DC CURRENT GAIN
-40
-1.2
I
B
= -20mA
I
B
= -18mA
I
B
= -16mA
I
B
= -14mA
I
B
= -12mA
I
B
= -10mA
I
B
= -8mA
I
B
= -6mA
I
B
= -4mA
-100
-0.8
-10
-0.4
I
B
= -2mA
0
-10
-20
-30
-1
-0.001
-0.01
-0.1
-1
-10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
CE
(sat)[V],V
BE
(sat)[V] SATURATION VOLTAGE
-10
1000
I
C
= 10·I
B
I
E
= 0
f=1.0MHz
-1
Cob[pF], CAPACITANCE
-0.1
-1
-10
V
BE
(sat)
100
-0.1
10
V
CE
(sat)
-0.01
-0.001
1
-0.01
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
-10
V
CE
=5V
Ic MAX(Pulse)
Ic MAX(DC)
10
DC
Dis
sip
Lim ation
ited
0u
s
I
C
[A], COLLECTOR CURRENT
10
1m
ms
s
100
-1
s/
b
Li
m
d
ite
10
-0.1
KSB744 V
CEO
MAX
KSB744A V
CEO
MAX
1
-0.01
-0.01
-0.1
-1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
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CoolFET™
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E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
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SuperSOT™-3
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SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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