KSD1021
KSD1021
Audio Frequency Power Amplifier
• Complement to KSB811
• Collector Current : I
C
=1A
• Collector Dissipation : P
C
=350mW
1
TO-92S
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
40
30
5
1
350
150
-55 ~ 150
Units
V
V
V
A
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Band Width Product
Output Capacitance
Test Condition
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=30V, I
E
=0
V
CE
=1V, I
C
=100mA
I
C
=1A, I
B
=0.1A
I
C
=1A, I
B
=0.1A
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
130
16
120
Min.
40
30
5
0.1
400
0.5
1.2
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
Y
120 ~ 240
G
200 ~ 400
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
KSD1021
Typical Characteristics
1.0
0.9
1000
V
CE
= 1V
I
B
= 5.0mA
I
B
= 4.5mA
I
B
= 4.0mA
I
B
= 3.5mA
I
B
= 3.0mA
I
C
[A], COLLECTOR CURRENT
0.8
0.7
0.6
h
FE
, DC CURRENT GAIN
9
10
100
I
B
= 2.5mA
0.5
I
B
= 2.0mA
0.4
I
B
= 1.5mA
0.3
0.2
10
I
B
= 1.0mA
I
B
= 0.5mA
0.1
0.0
0
1
2
3
4
5
6
7
8
1
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
100
f=1MHz
I
E
=0
1
V
BE
(sat)
C
ob
[pF], CAPACITANCE
10
100
1000
10
0.1
V
CE
(sat)
0.01
1
1
1
10
100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
:
Figure 4. Collector Output Capacitance
1000
500
V
CE
= 6V
f
T
[MHz],
CURRENT GAIN-BANDWIDTH PRODUCT
450
P
C
[mW], POWER DISSIPATION
-1
-10
-100
-1000
400
350
300
250
200
150
100
50
0
0
25
50
o
100
10
1
75
100
125
150
175
200
225
250
I
C
[mA], COLLECTOR CURRENT
T
a
[ C], AMBIENT TEMPERATURE
Figure 5. Current Gain Bandwidth Product
Figure 6. Power Derating
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
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or (b) support or sustain life, or (c) whose failure to perform
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2004 Fairchild Semiconductor Corporation
Rev. I10
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